Temperature dependence of absorption coefficient spectra for μc-Si films by resonant photothermal bending spectroscopy

Optical properties of microcrystalline 3C–SiC:H films measured by resonant photothermal bending spectroscopy

“…[1]. The grain size was estimated by X-ray diffraction (XRD) [5][6][7]. The thickness of lcSi:H film was about 0.6 lm.…”

“…Fig. 1 shows a schematic illustration of the resonant-PBS system [2,[5][6][7]. An edge of the sample was fixed to a holder in a specially designed optical cryostat.…”

“…The resonant-PBS has an advantage which is measurable in a vacuum. This advantage realizes the temperature dependence of optical absorption coefficient spectra from visible to infrared region for surface sensitive materials, such as hydrogenated microcrystalline silicon (lc-Si:H) [5][6][7]. Indeed, we have previously reported that extra optical absorption exists at 0.8-1.2 eV in lc-Si:H films, which originates from localized states related to oxygen impurities in grain boundary of lcSi:H [5][6][7].…”

“…A schematic illustration of resonant-PBS system used in this study[2,[5][6][7]. The tungsten-halogen lamp and ceramic heater can be moved in one direction reversibly.…”

The investigation of optical characteristics of metal target in high power laser ablation

“…Recently, there are some experimental studies about the absorption coefficient and the absorptivity [11,12]. However, few literatures investigate the characters of the absorption coefficient and the absorptivity theoretically in detail in pulsed laser ablation [10,13,14].…”