Optical properties of microcrystalline 3C–SiC:H films measured by resonant photothermal bending spectroscopy

Kunii, T.; Honda, Takashi; Yoshida, Norimitsu; Nonomura, Shuichi

doi:10.1016/j.jnoncrysol.2006.01.074

Cited by 10 publications

(7 citation statements)

References 9 publications

(19 reference statements)

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“…Because of the aptitude of the hot wire chemical vapour deposition (HWCVD) to avail a high density of H radicals, crucial for nanocrystalline growth, this deposition has been used by many groups to produce nanocrystalline SiC at temperatures below 400 °C using monomethyl-silane (MMS) [3][4][5][6]. In this study we employed a SiH 4 /CH 4 /H 2 mixture to deposit amorphous silicon carbide (a-SiC:H) by HWCVD at a substrate temperature of 380 °C.…”

mentioning

confidence: 99%

Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

Halindintwali

Knoesen

Julies

et al. 2011

Phys. Status Solidi C

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Amorphous SiC:H thin films were grown by hot wire chemical vapour deposition from a SiH4/CH4/H2 mixture at a substrate temperature below 400 °C. Thermal annealing in an argon environment up to 900 °C shows that the films crystallize as μc‐Si:H and SiC with a porous microstructure that favours an oxidation process. By a combination of spectroscopic tools comprising Fourier transform infrared, Raman scattering and X‐rays photoelectron spectroscopy we show that the films evolve from the amorphous SiHx/SiCH2 structure to nanocrystalline Si and SiC upon annealing at a temperature of 900 °C. A strong RT photoluminescence peak of similar shape has been observed at around 420 nm in both as‐deposited and annealed samples. Time‐resolved luminescence measurements reveal that this peak is fast decaying with lifetimes ranging from 0.5 to ∼1.1 ns. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 99%

Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

Halindintwali

Knoesen

Julies

et al. 2011

Phys. Status Solidi C

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“…In this study, resonant-type PBS (resonant-PBS) [22][23][24][25] was employed for improving the sensitivity. Figure 1 shows a schematic illustration of the resonant-PBS system.…”

Section: Experimental Methodsmentioning

confidence: 99%

Optical absorption spectra of perovskite thin films for defect estimation by photothermal bending spectroscopy

Hirota

Kato

Kawahara

et al. 2018

Jpn. J. Appl. Phys.

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The measurement of the optical absorption coefficient spectra of perovskite thin films of CH 3 NH 3 PbI 3 by resonant photothermal bending spectroscopy (resonant-PBS) and Fourier-transform photocurrent spectroscopy (FTPS) for the defect estimation of the material has been attempted. A fundamental absorption edge was observed in the photon energy ħω region of 1.5-1.6 eV by both techniques. In addition, extra absorption of about 10 2 cm %1 was detected at ħω < 1.5 eV only in the spectra measured by resonant-PBS. This extra absorption seems to indicate the existence of localized states in the bandgap of CH 3 NH 3 PbI 3 films. The difference between resonant-PBS and FTPS profiles below the absorption edge is caused by the difference in measurement mechanism, that is, resonant-PBS utilizes a temperature rise of the sample by the nonradiative recombination of photoexcited carriers, while FTPS measures photocurrent arriving at electrodes by the electric field after the photoexcitation. These results seem to indicate that resonant-PBS is a useful tool for the defect estimation of CH 3 NH 3 PbI 3 .

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“…During PECVD under hydrogen dilution, hydrogen carriers can reduce the density of defect states at the surface. 16 However, fabrication under hydrogen dilution usually requires a high substrate temperature and RF plasma power. [17][18][19] Under hydrogen-free PECVD, nonstoichiometric Si-rich Si x C 1Àx can be synthesized at low substrate temperatures, considerably enhancing its absorption coefficient.…”

Section: Introductionmentioning

confidence: 99%

Semi-transparent silicon-rich silicon carbide photovoltaic solar cells

Cheng

Chang

et al. 2015

RSC Adv.

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Optical properties of microcrystalline 3C–SiC:H films measured by resonant photothermal bending spectroscopy

Cited by 10 publications

References 9 publications

Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

Spectroscopy and structural properties of amorphous and nanocrystalline silicon carbide thin films

Optical absorption spectra of perovskite thin films for defect estimation by photothermal bending spectroscopy

Semi-transparent silicon-rich silicon carbide photovoltaic solar cells

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