Temperature and Pressure Dependence of Raman Scattering in Amorphous GeS2

Perakis, A.; Kotsalas, I. P.; Pavlatou, Evangelia A.; Raptis, Constantine A.

doi:10.1002/(sici)1521-3951(199901)211:1<421::aid-pssb421>3.0.co;2-f

Cited by 18 publications

(18 citation statements)

References 10 publications

(18 reference statements)

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“…For the germanium sulfide glass, the peak at $341 cm À1 is attributed to the symmetric stretching mode of bridging Ge-S-Ge bonds. The broad peak at 110 cm À1 is assigned to the bending modes of Ge-S-Ge bonds [12,13]. The strong peak at $416 cm À1 in the germanium oxide glass is assigned to the symmetric stretching modes of bridging Ge-O-Ge bonds and a weak peak at 860 cm À1 is assigned to the asymmetric stretching modes of bridging Ge-O-Ge (1-x)GeS 2 -xGeO 2 Fig.…”

Section: Raman Scatteringsupporting

confidence: 89%

“…6. Structural studies of pure GeS 2 and GeO 2 glasses by Raman spectroscopy have been reported in the literature and have shown that each glass is built up from tetrahedral units of GeS 4/2 and GeO 4/2 , respectively [11][12][13][14]. For the germanium sulfide glass, the peak at $341 cm À1 is attributed to the symmetric stretching mode of bridging Ge-S-Ge bonds.…”

Section: Raman Scatteringmentioning

confidence: 99%

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Preparation and characterization of germanium oxy-sulfide GeS2–GeO2 glasses

Kim

Saienga

Martin

2005

Journal of Non-Crystalline Solids

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Section: Raman Scatteringsupporting

confidence: 89%

Section: Raman Scatteringmentioning

confidence: 99%

Preparation and characterization of germanium oxy-sulfide GeS2–GeO2 glasses

Kim

Saienga

Martin

2005

Journal of Non-Crystalline Solids

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“…A higher processing temperature is obviously required to complete the decomposition/crystallization of 7 . [95] These results also indicate that 7 was not suitable for Ge(0) nanomaterial syntheses.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of Germanium Coordination Compounds for Production of Germanium Nanomaterials

et al. 2009

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A series of novel germanium(II) precursors was synthesized to initiate an investigation between the precursors’ structures and the morphologies of the resulting nanoparticles. The precursors were synthesized from the reaction of Ge[N(SiMe3)2]2 or [Ge(OBut)2]2 and the appropriate ligand: N,N’-dibenzylethylenediamine (H2-DBED), tert-butanol (H-OBut), 2,6-di-methyl phenol (H-DMP), 2,6-di-phenyl phenol (H-DPP), tert-butyldimethylsilanol (H-DMBS), triphenylsilanol (H-TPS), triphenylsilanethiol (H-TPST), and benzenethiol (H-PS). The products were identified as: [Ge(μc-DBED)]2 (1, μc= bridging chelating), [Ge(μ-DMP)(DMP)]2 (2), Ge(DPP)2 (3), [Ge(μ-OBut)(DMBS)]2, (4), [Ge(μ-DMBS)(DMBS)]2 (5), Ge(TPS)3(H) (6), [Ge(μ-TPST)(TPST)]2 (7), and Ge(PS)4 (8). The Ge(II) metal centers were found to adopt a pyramidal geometry for 1, 2, 4, 5, 7, a bent arrangement for 3, and a tetrahedral coordination for the Ge(IV) species 6 and 8. Using a simple solution precipitation methodology, Ge(0) nanomaterials were isolated as dots and wires for the majority of precursors. Compound 7 led to the isolation of amorphous GexSy. The nanomaterials isolated were characterized by TEM, EDS, and powder XRD. A correlation between the precursor’s arrangement and final observed nanomorphology was proffered as part of the ‘precursor structure affect’ phenomenon.

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“…The A 1 mode is well known to be a tetrahedral breathing mode (in which a central Ge atom is stationary and its four S neighbors move radially relative to the fixed Ge). This feature is strongly revealed in Raman measurements [29], because the mode is especially Raman active. In Raman measurements, there is a clear indication of a "two peak" structure to the A 1 band.…”

Section: B Dynamical Propertiesmentioning

confidence: 99%