TEM study of the structure and chemistry of a diamond/silicon interface

Abstract

The interface between diamond and silicon, fabricated by growing diamond films on (001) silicon by microwave plasma assisted chemical vapor deposition (MPACVD), was characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS). Two types of interface morphology were identified. Type A interfaces contain an amorphous transition layer composed of silicon, carbon, and oxygen; the diamond overgrowth on this layer consists of nanocrystalline grains with random orientations. Type B interfaces consist of large diamond grains having special orientations with respect to the silicon substrate, without an obvious presence of a glassy phase and with a much lower oxygen content than type A interfaces.

Thermal properties of Si(Al)/diamond composites prepared by in situ reactive sintering

“…TEM study of the structure and chemistry of a diamond/silicon interface showed the evidence of b-SiC [17].…”

On the Characterization of Thermal-Conductivity Degradation During Torsional Fatigue

“…Assuming randomly distributed micro-cracks, the damage parameter, D, is related to the crack density by the following expression [13]:…”

“…The ratio of the degraded value of Poisson's ratio (ν) to its intact value (ν 0 ) is also related to the crack density. For practical values of ν ranging from 0 to 0.5, ν ν 0 can be related to C d according to the following expression [13]:…”

“…Agapiou and DeVries [10] experimentally determined the thermal conductivity of stainless steel 304L for different values of porosity. Tzou [11][12][13] developed a model for the overall thermal conductivity of a solid due to the presence of internal cavities and penny-shaped cracks. Kato and Takahashi [6] measured the changes in the thermal conductivity of two different types of carbon steels (JIS-SACM645 and JIS-S45C) before and after rotating bending and tension-compression fatigue tests by utilizing a thermophysical testing apparatus.…”

Molecular-dynamics study of diamond/silicon (001) interfaces with and without graphitic interface layers

“…This appears to be sensitive to details of the biasing pretreatment and growth procedures. Under certain circumstances, one finds cubic or (3C-͒ SiC formation, 4,5 amorphous carbon, 6 and nanocrystalline graphite 7 at the interface, or at least in part of the interface. SiC formation has also been observed in diamond deposition on Si without bias enhancement.…”