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Epitaxial cuprous oxide, Cu2O, nanocrystals are deposited electrochemically onto n-InP(001). The lattice of the Cu2O is rotated 45° around the common [001] axis normal to the substrate plane. The shape of the Cu2O nanocrystals depends on the pH of the solution. Nanopyramids form at pH 9, and nanocubes form at pH 12.

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A very small amount of pre-deposited C on a Si substrate causes island formation after epitaxial growth of less than 2 monolayers Ge. These C-induced Ge dots can be as small as 10 nm in lateral size and 1 nm in height. Their areal density is 1011 cm−2. Intense photoluminescence signal from these small Ge quantum dots is observed reaching a maximum for 2.1±0.3 monolayers of Ge. In the initial stages of island formation, the optical transition of the wetting layer is blue-shifted by strain compensation effects. We propose spatially indirect mechanisms of radiative recombination between electrons confined in the underlying wetting layer and holes confined in the Ge islands.