TEM sample preparation of a SEM cross section using electron beam induced deposition of carbon

Ricci, E.; Cazzaniga, F.; Testai, S.

doi:10.1016/j.microrel.2015.07.018

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…In some circumstances, an intentional electron beam induced carbon deposition (EBID) from the residual vacuum is exploited to protect surface features prior to ion beam exposure and increase the success rate of TEM lamellas prepared by FIB milling in semiconductor related failure analysis [ 13 ]. This technique is also used to protect areas of freshly ion beam thinned TEM lamella from corrosion [ 14 ]. In all cases, apart from the deposition parameters (e.g., beam current, electron beam energy, etc.)…”

Section: Introductionmentioning

confidence: 99%

Monitoring Carbon in Electron and Ion Beam Deposition within FIB-SEM

2021

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It is well known that carbon present in scanning electron microscopes (SEM), Focused ion beam (FIB) systems and FIB-SEMs, causes imaging artefacts and influences the quality of TEM lamellae or structures fabricated in FIB-SEMs. The severity of such effects depends not only on the quantity of carbon present but also on its bonding state. Despite this, the presence of carbon and its bonding state is not regularly monitored in FIB-SEMs. Here we demonstrated that Secondary Electron Hyperspectral Imaging (SEHI) can be implemented in different FIB-SEMs (ThermoFisher Helios G4-CXe PFIB and Helios Nanolab G3 UC) and used to observe carbon built up/removal and bonding changes resulting from electron/ion beam exposure. As well as the ability to monitor, this study also showed the capability of Plasma FIB Xe exposure to remove carbon contamination from the surface of a Ti6246 alloy without the requirement of chemical surface treatments.

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Section: Introductionmentioning

confidence: 99%

Monitoring Carbon in Electron and Ion Beam Deposition within FIB-SEM

2021

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“…An alternative way is Transmission electron microscope (TEM) measurement; however, it faces a big challenge, in this case is TEM sample preparation. Original TEM sample preparation technology is difficult to positioning and thinning [26], [27], and the low success rate of single sample preparation as well as the poor positioning ability for single device. Besides, it is time consuming and requires high cost to prepare TEM sample using the Focused Ion beam (FIB) technology.…”

Section: Introductionmentioning

confidence: 99%

A Measurement Method on Nanoscale Thickness of the Ti Barrier Layer of TSV Structure for 3-D IC

Tian

et al. 2016

IEEE Trans. Compon., Packag. Manufact. Technol.

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As the characteristic dimension of an integrated circuit (IC) continuously scales down, together with the requirements of low power consumption, multiple functionality, and cost effectiveness, the conventional IC transforms into a 3-D IC. Through-silicon via (TSV) is a promising and preferred way to realize the reliable interconnection for a 3-D IC. Thus, accurate measurement of the critical structural parameters plays an important role in securing the integrity and reliability of TSV. In this paper, a novel image-processing-based measurement method is proposed to measure the barrier layer thickness and step coverage of TSV. Since the thickness of the barrier layer is generally less than 100 nm, which is a drawback of the conventional SEM method, we used the material information from SEM as well as structural prior of TSV to infer the barrier layer thickness on nanoscale. In addition, we further achieved the step coverage of thin films in TSV using the proposed measurement method.Index Terms-Barrier layer thickness, image processing, step coverage, through-silicon via (TSV).

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TEM sample preparation of a SEM cross section using electron beam induced deposition of carbon

Cited by 2 publications

References 7 publications

Monitoring Carbon in Electron and Ion Beam Deposition within FIB-SEM

Monitoring Carbon in Electron and Ion Beam Deposition within FIB-SEM

A Measurement Method on Nanoscale Thickness of the Ti Barrier Layer of TSV Structure for 3-D IC

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