2004
DOI: 10.1016/j.micron.2004.02.009
|View full text |Cite
|
Sign up to set email alerts
|

TEM investigations on ZnO nanobelts synthesized via a vapor phase growth

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

3
13
0

Year Published

2005
2005
2022
2022

Publication Types

Select...
8
1

Relationship

0
9

Authors

Journals

citations
Cited by 28 publications
(16 citation statements)
references
References 20 publications
3
13
0
Order By: Relevance
“…Crucial to this building process is the creation of fully functional nanoscale building blocks of various sizes and shapes. 1,2 To meet this demand, various methods, such as metalorganic chemical vapor deposition (MOCVD), 3 chemical vapor deposition (CVD), 4,5 laser ablation, 6 sol-gel, 7 and thermal evaporation 8 have been successfully used to produce a variety of nanowires/ nanotubes, such as C, 9,10 Si, 11,12 SiO 2 ,4,13 and GaN 14,15 ; nanorods 16,17 ; nanobelts 18 ; and even nanorings. 19 GaN epitaxial films and devices have attracted considerable attention because of their broad applications in blue/green light emitting diodes, 20,21 laser diodes and photodetectors, 3,15 and high-power/high-temperature electronics.…”
Section: Introductionmentioning
confidence: 99%
“…Crucial to this building process is the creation of fully functional nanoscale building blocks of various sizes and shapes. 1,2 To meet this demand, various methods, such as metalorganic chemical vapor deposition (MOCVD), 3 chemical vapor deposition (CVD), 4,5 laser ablation, 6 sol-gel, 7 and thermal evaporation 8 have been successfully used to produce a variety of nanowires/ nanotubes, such as C, 9,10 Si, 11,12 SiO 2 ,4,13 and GaN 14,15 ; nanorods 16,17 ; nanobelts 18 ; and even nanorings. 19 GaN epitaxial films and devices have attracted considerable attention because of their broad applications in blue/green light emitting diodes, 20,21 laser diodes and photodetectors, 3,15 and high-power/high-temperature electronics.…”
Section: Introductionmentioning
confidence: 99%
“…The ratio of zinc vapor pressure to oxygen vapor pressure controls the morphology of ZnO and thus induces defects in the crystal structure which, in turn, controls the electrical characteristics of the film. Due to the availability of a large number of synthesis techniques, the conditions and growth mechanism for the preparation of ZnO nanostructures vary across research groups [ 47 , 49–52 ].…”
Section: Synthesis Of Zno Nanostructuresmentioning
confidence: 99%
“…Compared with other semiconductor materials, zinc oxide has unique polar surface, and may form various nanostructures under the action of surface polarization charges and atoms with broken bond. The specific nanostructures that may be observed include tubular [6], comb-like [7], rod-like [8], ribbon-like [9] and hollow globe-like [10]. ZnO specimens…”
Section: Introductionmentioning
confidence: 99%