TCAD simulation of current filamentation in adjacent IGBT cells under turn-on and turn-off short circuit condition

Suzuki, Hiroshi; Ciappa, Mauro

doi:10.1016/j.microrel.2015.06.110

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How To Identify Tough Chip In Test Sequences1

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“…A UIS (unclamped inductive switching) test has been applied even for IGBT as well as MOSFET [94] to simulate a turn‐off mode of SCSOA [95, 96] or detect defects originated in missteps during wafer fabrication processes. From this point of view, all of the cells in the entire chip have a uniform current flowing even in the rated and higher current density.…”

Section: How To Identify Tough Chip In Test Sequencesmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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Section: How To Identify Tough Chip In Test Sequencesmentioning

confidence: 99%