Growth of short-circuit current filament in MOSFET-Mode IGBTs

Tanaka, Masahiro; Nakagawa, Akio

doi:10.1109/ispsd.2016.7520842

Cited by 10 publications

(7 citation statements)

References 6 publications

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“…If it is too low, the negative space charge caused by the electrons flowing from the cathode to the anode may cause a strong increase of the electric-field strength near the n − -n junction formed by the n − -base region and the n-FS region. Extensive investigations [29][30][31][32][33] have shown that the uniform current-density distribution under such conditions can be destabilised by the appearance of single or multiple current filaments. Furthermore, recent device simulations [33] have shown that destabilisation of the uniform current-density distribution may be triggered even in the absence of impact ionisation in the anodeside high-field region.…”

Section: Increased Short-circuit Robustness By the Concept Of Injectimentioning

confidence: 99%

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

IET Power Electronics

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Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed. (a) Turn-off transients of a 15 A-1200 V-IGBT with an FS layer created by a threestage proton implantation (T = 125°C), (b) Maximum DC-link voltage V DC,max at which the IGBT can be turned off softly

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Section: Increased Short-circuit Robustness By the Concept Of Injectimentioning

confidence: 99%

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

IET Power Electronics

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show abstract

“…One of the superior features of IGBTs is the ability to withstand both a high voltage and high current under short-circuit (SC) conditions for a certain time interval. The short-circuit safe operating area (SC-SOA) limit was investigated by many authors for IGBTs of different voltage classes from 1200 V to 6500 V [1][2][3][4][5][6]. The results in ref.…”

Section: Introductionmentioning

confidence: 99%

Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness

Mysore¹,

Basler²,

Lutz³

et al. 2021

ISPS'21 Proceedings

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In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly improved short-circuit robustness compared to IGBT without p-islands and for the same design. The simulated results of the IEFE IGBTs depict the suppression of electrical current crowding at the collector-side without affecting the static and dynamic losses of the device.

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“…The short-circuit safe operating area (SC-SOA) for different voltage classes ranging from 1200 V to 6500 V has been investigated in [1][2][3][4][5][6]. The results shown in [6], explain that IGBT SC destruction can be due to the formation of current filaments occurring at the collector side.…”

Section: Introductionmentioning

confidence: 99%

Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs

Mysore¹,

Basler²,

Lutz³

et al. 2021

ISPS'21 Proceedings

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In this work, an investigation of the top-side aluminium (Al) metallization modification, under repetitive short-circuit (SC) type I measurements, was carried out for 650 V IGBTs. These measurements were performed far beyond the safe operating area (SOA). The presence of current density filaments at the collector side during SC leads to a local temperature increase that reconstructs the emitter metallization and thus leads to a modification of the top Al surface. Here, the optical microscope was used to observe the change in emitter surface metallization. For 650 V IGBTs, a uniform Al modification pattern was observed irrespective of DC-link voltage and SC pulse width, which is in contrast to the results of 1200 V and 1700 V IGBTs. The computer-aided TCAD simulations were performed using a simplified front-side IGBT structure to understand the uniform Al modification on all the measured DC-link voltages.

show abstract

Growth of short-circuit current filament in MOSFET-Mode IGBTs

Cited by 10 publications

References 6 publications

Progress in IGBT development

Progress in IGBT development

Study of 6.5 kV injection enhanced floating emitter (IEFE) IGBT switching behavior and its improved short-circuit robustness

Aluminium modification as indicator for current filaments under repetitive short-circuit in 650 V IGBTs

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