Abstract:In this work the improved short-circuit robustness of a new IGBT along with its switching behavior is investigated. The application of the recently proposed injection enhanced floating emitter (IEFE) concept to a 6.5 kV IGBT results in a higher hole current injection from the buried floating p-islands in front of the p-collector under short-circuit conditions. Hence, this concept provides a significantly improved short-circuit robustness compared to IGBT without p-islands and for the same design. The simulated… Show more
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