TCAD advanced radiation damage modeling in silicon detectors

Abstract

In this work we present a methodology to develop a surface and bulk TCAD radiation damage effects model which enables a predictive insight into the electrical behavior of novel solid-state detectors up to the particle fluences expected at the end of HL-LHC. To better understand, in a comprehensive framework, the complex and articulated phenomena related to the radiation damage mechanisms several TCAD simulations have been carried out and compared with measurements performed on test structures and sensors. Surface radiation damage effects have been deeply investigated on both p-type and n-type substrate test structures exposed to X-ray irradiation at doses in the range 0.05-100 Mrad(SiO2). The complete bulk and surface radiation damage model findings have been then compared with available measurements in terms of charge collection efficiency up to 2.0×10 16 1 MeV equivalent neq/cm 2 .

TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

“…As a starting point, a TCAD sensitivity analysis to the variations of the main model's parameters has been carried out. The main results were reported in recent works where the separated effects of Q OX variation only, or of the acceptor/donor N IT variation only, were considered on C-V curves of p-type/ntype MOS capacitors and on I-V characteristics of gated-diodes [9,26]. The approach of selectively considering a single component of the surface radiation damage model allows a proficient study of the interplay between Q OX and N IT on irradiated silicon sensors, fostering a correct interpretation of measurements.…”

“…For a more detailed description of the methodology, refer to the cited works in each sub-paragraphs in which the measurement and extraction procedures have been described in their entirety. The values of Q OX , N ITacc , and N ITdon thus obtained, have been used as input parameters for the development of the comprehensive "Perugia 2019 Surface" analytical model specific for each technology process [7,[9][10][11][12][13]. Moreover, from the D ITacc and D ITdon profile, the energy distribution of the acceptor-like and donor-like interface defects has been assessed.…”

Sensor Design Optimization of Innovative Low-Power, Large Area FD-MAPS for HEP and Applied Science

“…In addition, two trap states at the Si-SiO 2 interface are introduced to describe the effects of ionizing energy losses, together with fixed oxide charges which build up due to trapped charges in the SiO 2 layer. While this model has been tuned and validated on p-type silicon, it has shown good performance for sensors produced by different vendors [20]. These results make us confident that the model has a good qualitative predictive power also for the ARCADIA sensors.…”

“…For a most realistic prediction of the impact of these defects, we have modeled both damage types, following the so-called new Perugia model [20,21]. This three-trap model introduces two acceptors and one donor state in the bandgap for the description of non-ionizing radiation damage in the silicon bulk.…”

Study of p-type silicon MOS capacitors at HL-LHC radiation levels through cobalt-60 gamma source and TCAD simulation

“…In [21] and [22] a three level model is presented for simulating the bulk damage effects for n-type and p-type substrates, which is usually referred to as the Perugia model. In order to incorporate also the surface damage effects an extension of the model has been made refereed to as the Perugia surface model 2019 presented in [24], [25]. The surface damage effects can be mainly described by two parameters: the oxide charge (Q ox ) and the interface trap states (N IT ).…”