TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

Morozzi, A.; Moscatelli, F.; Croci, Tommaso; Passeri, D.

doi:10.3389/fphy.2021.617322

Cited by 18 publications

(16 citation statements)

References 26 publications

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“…In the original Perugia model [10,22], a three level model is presented for simulating the bulk damage effects for n-type and p-type substrates. In order to incorporate also the surface damage effects an extension of the model has been made refereed to as the Perugia surface model 2019 [23,24]. The surface damage effects can be mainly described by three parameters: the oxide charge density (N ox ) and the two interface trap states (N it ) for donors and acceptors.…”

Section: Tcad Simulations For Detector Propertiesmentioning

confidence: 99%

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Nachman,

Peltola,

Asenov

et al. 2022

Preprint

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Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for developing future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.

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Section: Tcad Simulations For Detector Propertiesmentioning

confidence: 99%

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Nachman,

Peltola,

Asenov

et al. 2022

Preprint

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“…Although these models can describe the DC and AC characteristics of the circuit, it is difficult to describe the ESD effect of the device unless the model parameters are extracted by special experimental tests [ 13 ]. Technology computer-aided design (TCAD) can effectively describe the transient large-signal characteristics of components or the degradation characteristics under extreme conditions according to the physical characteristics of semiconductor devices, and it is generally applied based on physical principles [ 9 , 14 ]. With the development of computer technology, the calculation level of TCAD is improved, which can solve complex numerical models [ 15 , 16 , 17 ].…”

Section: Introductionmentioning

confidence: 99%

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

Chai

Liu

et al. 2023

Micromachines

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The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures. In this paper, the mixed TCAD model of the ESD protection circuit is built and simulated, and the negative transmission line pulse (TLP) injection damage experiment is carried out on the CD4069UBC chip. The circuit model consists of three-dimensional shallow trench isolation (STI) diode TCAD models and a three-dimensional multi-gate Complementary Metal-Oxide-Semiconductor (CMOS) inverter TCAD model. Moreover, the TCAD modeling is based on a 0.25 μm technology node. Through the transient simulation of the electrothermal coupling, the electrical signal of the input and output nodes of the circuit and the distribution of the electrothermal parameters in the device are obtained. Moreover, by analyzing the simulation results, the physical phenomena and the mechanisms of interference and damage mechanism during TLP injection are explained. The location and type of diode damage in the TLP injection simulation results of the circuit model are consistent with the TLP experiment damage results. The proposed ESD protection circuit model and analysis method are beneficial to ESD robustness prediction and ESD soft damage analysis of IC.

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“…The intense x-ray radiation deteriorates the Si detector performance by inducing the fixed oxide charges (Nox) and interface trap charges (Nit) in the insulating layer and at Si-SiO2 interface respectively [2,6] and these charges increases with an increasing x-ray dose and finally, saturates at few MGy of x-ray dose [6,8]. These radiation damage parameters changes the macroscopic performance of the the detector by increasing full depletion voltage (Vfd), surface leakage current, inter strip capacitance, reduction of breakdown voltage and charge lose at the interface of the detector.…”

Section: Introductionmentioning

confidence: 99%

TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

Saini,

Srivastava

2023

J. Phys.: Conf. Ser.

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In the intense x-ray radiation environment at synchrotron sources, it is reported that the performance of the silicon pixel detectors degrades with an increasing x-ray dose up to 10 MGy. To study the impact of x-ray irradiation effects in the n-Fz Si microstrip detector, the microscopic radiation damage parameters of x-ray radiation were extracted from the current–voltage, and capacitance-voltage experiments on test Si microstrip detector. The damage parameters are implemented in Synopsys TCAD. In this paper, we have irradiated the test structure up to 10 MGy, and the results on full depletion voltage, and leakage current are compared with the TCAD simulation results. A very good agreement in between experimental and simulation results is observed in the leakage current for the non-irradiated, and 1 MGy irradiated detectors, where for high doses up to 10 MGy, experimental leakage current was fifty times higher than the simulated leakage current at full depletion voltage. The full depletion voltage in 0 MGy detector is also well matched with the simulation result, and further, it shows the full depletion voltage performance of x-ray irradiated detector. Finally, the new detector design specifications and process parameters are proposed for the optimum performance of the radiation hard p+n Si pixel detector equipped with guard rigs at cut edge for the next generation photon science applications.

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TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

Cited by 18 publications

References 26 publications

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Simulations of Silicon Radiation Detectors for High Energy Physics Experiments

Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment

TCAD Simulation of X-ray irradiated Si microstrip detector : Impact on full depletion voltage and leakage current

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