Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n‐In0.53Ga0.47As Layer

Li, Meng; Lee, Jeungchan; Oh, Jungwoo; Lee, Hi Deok

doi:10.1002/pssr.201800131

Cited by 3 publications

(2 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ohmic contact formation between the p-InP substrate and the AuBe/Au metal electrode is an essential factor to improve η up 14.37% by receding the series resistance. Recently, Li et al [157] proposed Tb/Ni/TiN metal stack for n-InGaAs with lower specific ρ c of 7.98 × 10 −9 Ω cm 2 . Increasing the dopant concentration in the Ni-InGaAs alloy and the lowering the barrier height between Ni-InGaAs and n-In 0.53 Ga 0.47 As successfully increase the contact resistance.…”

Section: Metal Contact Optimizationmentioning

confidence: 99%

“…Recently, studies used an InGaAs cell in multi-junction such as GaInP/GaAs/InGaAs [103], and tandem cells such as GaAs/InGaAs [154], which aim to increase the total efficiency and to extend the power harvesting into the mid-infrared wavelengths. Several studies reported the crystal defects of lattice mismatch InGaAs cells for bandgap from 0.55 to 0.6 eV [155], characterization of the cell performances and optimization of the structure design [156][157][158][159].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

View full text Add to dashboard Cite

Generally, waste heat is redundantly released into the surrounding by anthropogenic activities without strategized planning. Consequently, urban heat islands and global warming chronically increases over time. Thermophotovoltaic (TPV) systems can be potentially deployed to harvest waste heat and recuperate energy to tackle this global issue with supplementary generation of electrical energy. This paper presents a critical review on two dominant types of semiconductor materials, namely gallium antimonide (GaSb) and indium gallium arsenide (InGaAs), as the potential candidates for TPV cells. The advantages and drawbacks of non-epitaxy and epitaxy growth methods are well-discussed based on different semiconductor materials. In addition, this paper critically examines and summarizes the electrical cell performance of TPV cells made of GaSb, InGaAs and other narrow bandgap semiconductor materials. The cell conversion efficiency improvement in terms of structural design and architectural optimization are also comprehensively analyzed and discussed. Lastly, the practical applications, current issues and challenges of TPV cells are critically reviewed and concluded with recommendations for future research. The highlighted insights of this review will contribute to the increase in effort towards development of future TPV systems with improved cell conversion efficiency.

show abstract

Section: Metal Contact Optimizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

et al. 2021

View full text Add to dashboard Cite

show abstract

Microstructural Characterization of Multilayer Metal Stack on InGaAs/InP Contact

Hsu

Chen

et al. 2020

Journal of Elec Materi

View full text Add to dashboard Cite

Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

Kim

Avci

Young

2020

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

Comprehensive channel material benchmarking for n-and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In 0.7 Ga 0.3 As, In 0.53 Ga 0.47 As, GaAs, and Ge for nMOS, Si and Ge for pMOS) are covered using hybrid simulation of quantum ballistic transport and semi-classical Monte Carlo. Current-voltage characteristics and performance metrics such as the capacitance and effective drive current (I eff) are explored considering device parasitic components. For low power operation, III-V nMOS may deliver good performance while Ge n-and pMOS with different source/drain tip designs may give performance advantage over Si from low power to high performance operations. CMOS benchmarking results for I eff , capacitance, and switching energy vs. delay (for gate capacitance loading vs. interconnect wire capacitance loading) are also presented for various homogeneous and hybrid combinations of n-and pMOS (Si CMOS, III-V hybrid CMOS, Ge hybrid CMOS, and Ge CMOS). Finally, sensitivity analysis is performed for I eff on the parasitic resistance (R SD) and contact resistivity (ρ c). Novel channel materials may relax the R SD and ρ c requirements to match the I eff performance of Si reference. Comprehensive literature reviews of experimental ρ c 's of novel materials are also presented to discuss the effect of material-dependent R SD .

show abstract

Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n‐In_0.53Ga_0.47As Layer

Cited by 3 publications

References 15 publications

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

A Review on Thermophotovoltaic Cell and Its Applications in Energy Conversion: Issues and Recommendations

Microstructural Characterization of Multilayer Metal Stack on InGaAs/InP Contact

Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects

Contact Info

Product

Resources

About