“…It should be noted that designing reconfigurable logic gates are not limited to emerging transistors only, e.g., SiNW FETs, Graphene transistors, or ASL. One can get similar characteristics using only CMOS transistors, but it requires a larger number of transistors as discussed in [15][16][17]. Three-dimensional scheme of the silicon nanowire field effect transistors (SiNW FETs) with the characteristics of two separate gates, namely, the control gate (CG) and polarity gate (PG) to form either a p-channel metal-oxide-semiconductor (PMOS) or a n-channel metal-oxide-semiconductor (NMOS) field effect transistor.…”