Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Seo, Jung Hun; An, Eun Su; Park, Taesu; Hwang, S.; Kim, Gi‐Yeop; Song, Kyung Bin; Oh, Eunseok; Choi, Minsuk; Watanabe, Kenji; Taniguchi, Takashi; Jo, Younjung; Yeom, Han Woong; Choi, Si‐Young; Shim, Ji Hoon; Kim, Jun Sung

doi:10.48550/arxiv.2004.12650

Cited by 2 publications

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“…F5GT, however, the temperature-dependent remanence behaves as a typical ferromagnet below 220K, which is in accordance with the data in Fig. 1D Compared to FGT, the recent works reveal that the magnetic ground state in F5GT is sensitive to Cobalt substitution (34)(35)(36). However, it is unclear whether the magnetic ground state in F5GT is also sensitive to the in-situ charge doping.…”

Section: Resultssupporting

confidence: 87%

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂

et al. 2021

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Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them are semiconducting or insulating and the vdW itinerant magnets, especially vdW itinerant AFM, are very rare. Here, we studied the anomalous Hall effect of a vdW itinerant magnet Fe5GeTe2 (F5GT) with various thicknesses down to 6.8 nm (two unit cells). Despite the robust ferromagnetic ground state in thin-layer F5GT, however, we show that the electron doping implemented by a protonic gate can eventually induce a magnetic phase transition from FM to AFM. Realization of an antiferromagnetic phase in F5GT highlights its promising applications in high-temperature antiferromagnetic vdW devices and heterostructures.

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Section: Resultssupporting

confidence: 87%

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂

et al. 2021

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“…Most recently, researchers confirmed that the Fe defectinduced Kondo hole effect or surface oxidation could induce weak coupling in the FGT layers [32,34]. The anomalous phenomena induced by the coexistence of AFM and FM phases have been discussed with considering the existing metastable state in FGT [33,[45][46][47]. But the positive exchange-biased AHE can not be explained by the simple interface coupling between AFM and FM phases.…”

Section: Resultsmentioning

confidence: 99%

The positive exchange bias property with hopping switching behavior in van der Waals magnet FeGeTe

Hu¹,

Cui²,

Yue³

et al. 2022

2D Mater.

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The magnetic exchange bias effect is one of the representative interlayer magnetic coupling phenomena and is widely utilized in numerous technological applications. However, its mechanism is still elusive even in a simple magnetic bilayered system because of the complex interface magnetic orders. Van der Waals layered magnetic materials may provide an essential platform for deeply understanding the detailed mechanism of the exchange bias owing to its ideal interface structure. Here we first observed the positive exchange-biased anomalous Hall effect (AHE) with a hopping switching behavior in the FeGeTe Van der Waals nano-flakes. After systemically studying the cooling field dependence properties of the exchange bias effect, we propose that the coexistence of stable and frustrated surface magnetization of the antiferromagnetic phase will modify the total interface coupling energy density between the ferromagnetic (FM) and antiferromagnetic (AFM) phases. This model could provide a consistent description for such unusual exchange bias effect based on microspin simulation.

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Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Cited by 2 publications

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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂

The positive exchange bias property with hopping switching behavior in van der Waals magnet FeGeTe

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Tailoring high-TN interlayer antiferromagnetism in a van der Waals itinerant magnet

Cited by 2 publications

References 0 publications

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2

The positive exchange bias property with hopping switching behavior in van der Waals magnet FeGeTe

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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂