Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe<sub>5</sub>GeTe<sub>2</sub>

Tan, Cheng; Xie, Wen; Zheng, Guolin; Aloufi, Nuriyah Mohammed; Albarakati, Sultan; Algarni, Meri; Li, Junbo; Partridge, J. G.; Culcer, Dimitrie; Wang, Xiaolin; Yi, Jie; Tian, Mingliang; Xiong, Yimin; Zhao, Yu-Jun; Wang, Lan

doi:10.1021/acs.nanolett.1c01108

Cited by 54 publications

(49 citation statements)

References 56 publications

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“…The large electron doping induced by the ionic gate (∼10 14 cm –2 per layer) causes a substantial shift of the electronic bands of FGT. The large variation in the DOS at the Fermi level leads to appreciable modulation in the ferromagnetism, in agreement with the Stoner model for itinerant electrons. , Finally, metallic ferromagnet Fe 5 GeTe 2 has been electron doped with protonic gating, which can induce a transition to an AF phase at 2 K . Recently, room temperature ferromagnetism has been observed in MBE grown Fe 5 GeTe 2 2D films …”

Section: Spintronics: From Fundamentals To Devicessupporting

confidence: 69%

“…The large variation in the DOS at the Fermi level leads to appreciable modulation in the ferromagnetism, in agreement with the Stoner model for itinerant electrons. 12,439 Finally, metallic ferromagnet Fe 5 GeTe 2 has been electron doped with protonic gating, which can induce a transition to an AF phase at 2 K. 440 Recently, room temperature ferromagnetism has been observed in MBE grown Fe 5 GeTe 2 2D films. 339 Manipulation of the Magnetization of 2D Magnets by Current-Induced Spin−Orbit Torque.…”

Section: Spintronics: From Fundamentals To Devicesmentioning

confidence: 99%

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The Magnetic Genome of Two-Dimensional van der Waals Materials

et al. 2022

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Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism ( i.e. , synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

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Section: Spintronics: From Fundamentals To Devicessupporting

confidence: 69%

Section: Spintronics: From Fundamentals To Devicesmentioning

confidence: 99%

The Magnetic Genome of Two-Dimensional van der Waals Materials

et al. 2022

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“…Firstly, we note that the crystals are plate-like in nature and behave similar to Fe 5−x GeTe 2 during simple cleaving tests using adhesive tapes. Since exfoliation of Fe 5−x GeTe 2 to near monolayer limit has been demonstrated, [6,27,22] it seems likely that similar exfoliation of the arsenide or arsenic-containing crystals would be possible. Dedicated efforts are necessary to examine this characteristic in detail, and such endeavors should probably treat Fe 5−x AsTe 2 flakes as air sensitive.…”

Section: Structural Characterizationmentioning

confidence: 99%

“…[1] These trends may help explain the formation of a non-compensated antiferromagnetic structure in Fe 4.8 AsTe 2 crystals where significant stacking disorder is evidenced by the diffraction data. Recently, experiments have demonstrated that gating ultra-thin Fe 5−x GeTe 2 seemingly produces an antiferromagnetic state, [22] and it has been shown that cobalt substitution also induces AFM. [11,1] Also, calculations have suggested that bilayer Fe 5 GeTe 2 will be antiferromagnetic.…”

Section: Physical Propertiesmentioning

confidence: 99%

“…[13,14,15,16,17] In general, Fe 5−x GeTe 2 and related Fe 4 GeTe 2 have garnered significant attention recently due to their high ordering temperature and complex behaviors. [18,19,20,21,22,23,24,25,26] The present work was motivated by identifying further routes to tune the magnetism in Fe 5−x GeTe 2 and related bulk phases so that novel properties and logical designs of het-erostructures can be achieved.…”

Section: Introductionmentioning

confidence: 99%

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Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution

May,

Yan,

Hermann

et al. 2021

Preprint

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In order to tune the magnetic properties of the cleavable high-Curie temperature ferromagnet Fe 5−x GeTe 2 , the effect of increasing the electron count through arsenic substitution has been investigated. Small additions of arsenic (2.5 and 5%) seemingly enhance ferromagnetic order in polycrystalline samples by quenching fluctuations on one of the three magnetic sublattices, whereas larger As concentrations decrease the ferromagnetic Curie temperature (T C ) and saturation magnetization. This work also describes the growth and characterization of Fe 4.8 AsTe 2 single crystals that are structurally analogous to Fe 5−x GeTe 2 but with some phase stability complications.Magnetization measurements reveal dominant antiferromagnetic behavior in Fe 4.8 AsTe 2 with a Néel temperature of T N ≈42 K. A field-induced spinflop below T N results in a switch from negative to positive magnetoresistance, with significant hysteresis causing butterfly-shaped resistance loops. In addition to reporting the properties of Fe 4.8 AsTe 2 , this work shows the importance of manipulating the individual magnetic sublattices in Fe 5−x GeTe 2 and motivates further efforts to control the magnetic properties in related materials by fine tuning of the Fermi energy or crystal chemistry.

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A Room‐Temperature Spin‐Valve with van der Waals Ferromagnet Fe₅GeTe₂/Graphene Heterostructure

et al. 2023

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can allow the discovery of basic new physical phenomena and the development of new device concepts. [1] The discovery of new vdW quantum materials and their heterostructures starting from graphene, insulators, semiconductors, superconductors, and topological materials has revolutionized both fundamental and applied research. [2,3] The most recent addition to this vdW family is magnets, which have offered various advantages over conventional magnets and opened new perspectives in vdW heterostructure designs. [4][5][6] In addition to the atomically thin and flat nature of vdW magnets, flexibility, gate tunability, strong proximity interactions, and twist angle between the layers can offer a unique degree of freedom and an innovative platform for device functionalities. [4,5] Recently, several vdW magnets have emerged with the discovery of insulating Cr 2 Ge 2 Te 6 , [7] semiconducting (CrI 3 , [8] CrBr 3 [9] ), and metallic Fe x GeTe 2 . [10,11] The insulating vdW magnets are useful for spin-filter tunneling [9,12] and proximityinduced magnetism, [13][14][15] whereas the metallic magnets can be used as electrodes in magnetic tunnel junctions, [16] observationThe discovery of van der Waals (vdW) magnets opened a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices with vdW ferromagnets are limited to cryogenic temperatures, inhibiting their broader practical applications. Here, the robust room-temperature operation of lateral spin-valve devices using the vdW itinerant ferromagnet Fe 5 GeTe 2 in heterostructures with graphene is demonstrated. The room-temperature spintronic properties of Fe 5 GeTe 2 are measured at the interface with graphene with a negative spin polarization. Lateral spin-valve and spin-precession measurements provide unique insights by probing the Fe 5 GeTe 2 /graphene interface spintronic properties via spin-dynamics measurements, revealing multidirectional spin polarization. Density functional theory calculations in conjunction with Monte Carlo simulations reveal significantly canted Fe magnetic moments in Fe 5 GeTe 2 along with the presence of negative spin polarization at the Fe 5 GeTe 2 / graphene interface. These findings open opportunities for vdW interface design and applications of vdW-magnet-based spintronic devices at ambient temperatures.

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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂

Cited by 54 publications

References 56 publications

The Magnetic Genome of Two-Dimensional van der Waals Materials

The Magnetic Genome of Two-Dimensional van der Waals Materials

Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution

A Room‐Temperature Spin‐Valve with van der Waals Ferromagnet Fe₅GeTe₂/Graphene Heterostructure

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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2

Cited by 54 publications

References 56 publications

The Magnetic Genome of Two-Dimensional van der Waals Materials

The Magnetic Genome of Two-Dimensional van der Waals Materials

Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution

A Room‐Temperature Spin‐Valve with van der Waals Ferromagnet Fe5GeTe2/Graphene Heterostructure

Contact Info

Product

Resources

About

Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe₅GeTe₂

A Room‐Temperature Spin‐Valve with van der Waals Ferromagnet Fe₅GeTe₂/Graphene Heterostructure