The extremely thin absorber (ETA)
solar cell architecture can enable
higher efficiencies than planar cells for absorbers that have low
carrier lifetimes or mobilities. Efficient charge separation requires
that interfacial electron and hole transfer proceed much faster than
the recombination lifetime of photoexcited carriers. In this work,
transient absorption spectroscopy was employed to measure these ultrafast
photophysical processes in CdSe-coated ZnO nanowire ETA cells and
model planar films. At low pump fluences, carrier lifetime was controlled
by Shockley–Read–Hall and surface recombination. Annealing
the electrodeposited CdSe films increased the lifetime 50-fold, to
>1 ns as measured by transient absorption spectroscopy, which correlated
to improved ETA cell performance. Interfacial electron transfer from
the CdSe coating into the ZnO nanowires occurred 3 orders of magnitude
faster, within 1 ps, independent of the presence or absence of an
interfacial CdS buffer layer. Interfacial hole transfer to the ferri(o)cyanide
redox couple could not be directly measured, but photodegradation
of the semiconductor surface in the presence of electrolyte under
prolonged light exposure resulted in faster dynamic response due to
higher densities of surface electron trap states. This study provides
a framework for understanding photophysics and improving performance
of nanostructured, semiconductor-sensitized solar cells through a
combination of device measurements and ultrafast probes.