Tailor-made oxide architectures attained by molecularly permeable metal-oxide organic hybrid thin films

Sarkar, Debabrata; Taffa, Dereje H.; Ishchuk, Sergey; Hazut, Ori; Cohen, Hagai; Toker, Gil; Asscher, Micha; Yerushalmi, Roie

doi:10.1039/c4cc04104f

Cited by 8 publications

(8 citation statements)

References 17 publications

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“…The difference of MLD to ALD mainly refers to the choice of precursors, in MLD at least one of the precursors being substituted with an organic molecule. This strategy has proven to be very versatile, so that zincones, alucones, titanicones, and many other hybrid materials have been successfully grown by MLD. The resulting deposited hybrid coatings often exhibit interesting chemical or physical properties, which are distinct from those of their corresponding metal oxides and polymers.…”

Section: Introductionmentioning

confidence: 99%

Reversible and Irreversible Reactions of Trimethylaluminum with Common Organic Functional Groups as a Model for Molecular Layer Deposition and Vapor Phase Infiltration

Yang

Brede²,

Ablat

et al. 2017

Adv Materials Inter

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Organic–inorganic hybrid materials are of great demand not at least for their enormous application potential in flexible devices. Atomic or molecular layer deposition (ALD or MLD) and vapor phase infiltration (VPI) offer novel pathways for the fabrication of such hybrids, but a clear understanding of the chemistry between the vaporized precursors and functional molecules is still lacking. In this work, the interactions between trimethylaluminum (TMA) and the organic functional groups OH, NH2, and NO2 in the respective substituted phenyls, as well as their stability upon exposure to air are investigated. The experimental evidence agrees with theoretically predicted reaction pathways, showing that TMA initially binds to Lewis basic atoms of the investigated functional groups. Depending on the reaction energy barriers, the interaction between TMA and the investigated functional groups may result in either stable chemical bonding or intermediates that decompose upon exposure to humidity. This investigation contributes to the understanding of ALD/MLD and VPI processes at a molecular level and will support a better process optimization.

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Section: Introductionmentioning

confidence: 99%

Reversible and Irreversible Reactions of Trimethylaluminum with Common Organic Functional Groups as a Model for Molecular Layer Deposition and Vapor Phase Infiltration

Yang

Brede²,

Ablat

et al. 2017

Adv Materials Inter

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“…Another zinc precursor employed in ALD/MLD is zinc acetate. [117,229] For titanium, the most common precursor is TiCl 4 , extensively used with EG, [179,293,[391][392][393][394][395][396][397][398][399][400] and other orga nics. [46,49,105,112,122,211,230,232,235,248,254,255,336,378,390,[401][402][403][404][405][406][407][408] For example, the combination, TiCl 4 plus maleic anhydride has been utilized to deposit thin films with biologic synaptic functions.…”

Section: Aluminum- Zinc- and Titanium-based Processesmentioning

confidence: 99%

“…For titanium, the most common precursor is TiCl 4 , extensively used with EG, [ 179,293,391–400 ] and other organics. [ 46,49,105,112,122,211,230,232,235,248,254,255,336,378,390,401–408 ] For example, the combination, TiCl 4 plus maleic anhydride has been utilized to deposit thin films with biologic synaptic functions.…”

Section: Brief Account Of Ald/mld Processes Developedmentioning

confidence: 99%

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Multia

Karppinen

2022

Adv Materials Inter

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organic ligands act as bridges between the metal centers to form infinite 1D, 2D, or 3D structures. These materials are often referred to as coordination polymer (CP) [1] or metal-organic framework (MOF) [2] materials; the latter term is used when the metal-organic material is crystalline and highly porous. [3] The research field of CP-and MOF-type materials has grown tremendously over the last two decades. The structural and chemical diversity of these materials has served as a continuous source of scientific excitement; the same diversity has also triggered huge technological interest as these materials possess enormous potential to be tailored for a wide variety of applications ranging from gas capture, storage, and separation to sensing, catalysis, optics, electronics, and energy storage. [4][5][6][7] Most of the targeted application breakthroughs of metal-organics require that these materials can be produced as highquality thin films and coatings, which can be integrated with the other components in the actual device configuration. The possibility to deposit such thin films in an industry-feasible manner on the substrate types needed, would be a major step forward in the field. [8] Traditionally, solvent-based processes such as liquid-phase epitaxy, Langmuir-Blodgett, layer-by-layer, and electrochemical deposition techniques have been used for metal-organic thin films. [9][10][11] These are, however, incompatible with the requirements set by the possible integration of the materials in microelectronics. This is due to corrosion and contamination risks, and the problems in patterning and precise deposition on high-aspect-ratio features. Hence, it is vital to develop solventfree thin-film deposition routes for the metal-organic material family. In the optimal case, these deposition methods should allow conformal coatings on large-area and high-aspect-ratio substrates.The currently strongly emerging ALD/MLD technique is uniquely suited to address the challenge in a scientifically elegant yet industrially feasible way. This technique is derived from the two parent gas-phase thin-film techniques: ALD for inorganic materials (mostly binary metal oxides, sulfides, and nitrides), [12][13][14] and its counterpart MLD for purely organic thin films (e.g., polyimides and polyamides). [15] In both cases, the attractive film growth characteristics are derived from the unique way of separating the different precursor gas pulses. Currently, ALD is the standard thin-film technology in many Atomic layer deposition (ALD) for high-quality conformal inorganic thin films is one of the cornerstones of modern microelectronics, while molecular layer deposition (MLD) is its less-exploited counterpart for purely organic thin films. Currently, the hybrid of these two techniques, i.e., ALD/MLD, is strongly emerging as a state-of-the-art gas-phase route for designer's metal-organic thin films, e.g., for the next-generation energy technologies. The ALD/MLD literature comprises nearly 300 original journal papers covering most of the alkali...

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“…Thermal processing of hybrid organic-inorganic Ti-EG lms was previously demonstrated as a versatile method for controlling the reactivity of TiO 2 by intentional introduction of electronic defect states, doping, and band positions adjustment. [19][20][21][22] (ii…”

Section: Introductionmentioning

confidence: 99%

Layered Si–Ti oxide thin films with tailored electrical and optical properties by catalytic tandem MLD-ALD

et al. 2021

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Tailor-made oxide architectures attained by molecularly permeable metal-oxide organic hybrid thin films

Cited by 8 publications

References 17 publications

Reversible and Irreversible Reactions of Trimethylaluminum with Common Organic Functional Groups as a Model for Molecular Layer Deposition and Vapor Phase Infiltration

Reversible and Irreversible Reactions of Trimethylaluminum with Common Organic Functional Groups as a Model for Molecular Layer Deposition and Vapor Phase Infiltration

Atomic/Molecular Layer Deposition for Designer's Functional Metal–Organic Materials

Layered Si–Ti oxide thin films with tailored electrical and optical properties by catalytic tandem MLD-ALD

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