Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Chen, Zhenkun; Dubois, Emmanuel; Ravaux, Florent; Danneville, F.

doi:10.1016/j.mee.2012.04.035

Cited by 4 publications

(1 citation statement)

References 15 publications

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“…Among other applications, it is used as metal gate electrode, diffusion barrier, adhesive layer, or hard mask [1][2][3][4] in very large scale integration. TiN etching raises many challenges such as having high selectivity over mask and under layers, controlling the etch profiles and the generation of nonvolatile residues.…”

Section: Introductionmentioning

confidence: 99%

Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a Cl2/Ar/N2 inductively coupled plasma

Sang

Gour

Darnon

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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An inductively coupled plasma etch process for the fabrication of TiN nanostructures over nanotopography is presented. Using a Cl2/Ar/N2 plasma, a selectivity of 50 is achieved over SiO2. The effect of N2 flow rate on the etch rates and the nonvolatile residues on TiN sidewalls is investigated. As N2 flow rate is increased up to 50 sccm, a change in the deposition of the nonvolatile residues on TiN sidewalls is observed. The current density–voltage characterizations of TiN devices fabricated with TiN nanostructure sidewalls are presented. The measured current densities of two different samples etched with low and high N2 flow rate, respectively, demonstrated the presence after cleaning of an insulating layer deposited on the sidewalls for low N2 flow rate only.

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Section: Introductionmentioning

confidence: 99%