We present the analytical modelling and experimental characterization of a new design of silicon nitride tunable bandpass filter based on serially coupled ring resonators assisted Mach-Zehnder interferometer (SR-MZI). SR-MZI filters provide an additional degree of freedom to independently control the bandwidth and shape of the passband as compared to previous ring-assisted MZI filters. It is possible to tune the bandwidth, shape and side-band rejection of the response by adjusting the coupling in the filters, providing a scope for fully reconfigurable performance. The fabrication of the filters is CMOS compatible and supports mass production. Preliminary results for thermal controllability are presented.
We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic single electron transistors, silicon tunnel field effect transistors, and planar resistive memories. These devices do exploit one or two nanometric-scale tunnel oxide junctions based on TiO2, SiO2, HfO2, Al2O3, or a combination of those. Because the nanodamascene technology involves processing temperatures lower than 300°C, this technology is fully compatible with CMOS back-end-of-line and is used for monolithic 3D integration.
This paper presents two approaches for the fabrication of top-down titanium nanostructures. The first approach involves electron beam lithography followed by a tailored titanium plasma etching. The two main challenges of this process lie in the optimization of the negative tone Ma-N electroresist resolution and in the definition of a controlled titanium etching process for titanium patterns less than 20 nm thick and wide. The second proposed approach is a damascene process where the titanium nanostructures are buried in the oxide. Very shallow and narrow (20 nm  20 nm) trenches are first patterned in the oxide and nanostructures are obtained by planarization of an evaporated titanium film. The dimensions of the structures are defined by the electron beam lithography resolution and the etching recipe. The third dimension is given by the titanium or any other metal thickness and can be controlled down to few nanometers thanks to the planarization step.
We present tunable bandpass optical filters based on serially coupled ring resonators (RRs) coupled to one arm of a Mach-Zehnder interferometer (MZI) with improved tunability and sharper transitions compared to previous MZI-RRs configurations.
An inductively coupled plasma etch process for the fabrication of TiN nanostructures over nanotopography is presented. Using a Cl2/Ar/N2 plasma, a selectivity of 50 is achieved over SiO2. The effect of N2 flow rate on the etch rates and the nonvolatile residues on TiN sidewalls is investigated. As N2 flow rate is increased up to 50 sccm, a change in the deposition of the nonvolatile residues on TiN sidewalls is observed. The current density–voltage characterizations of TiN devices fabricated with TiN nanostructure sidewalls are presented. The measured current densities of two different samples etched with low and high N2 flow rate, respectively, demonstrated the presence after cleaning of an insulating layer deposited on the sidewalls for low N2 flow rate only.
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