2016
DOI: 10.1016/j.vacuum.2016.08.003
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Highly anisotropic etching of Ta thin films using high density plasmas of halogen based gases

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Cited by 3 publications
(1 citation statement)
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“…A higher ICP source power can give higher plasma density, while increasing the bias power can lead to higher energy of the bombarding etchant ions. As reported in the literature, we also observed that by raising either or both the powers [28,29] resulted in a higher etching rate [30], while raising the ICP power and/or gas pressure [31] leads to an increase in the etching rate as well as the undercut [32] in the masked area.…”
Section: Dry Etchingsupporting
confidence: 87%
“…A higher ICP source power can give higher plasma density, while increasing the bias power can lead to higher energy of the bombarding etchant ions. As reported in the literature, we also observed that by raising either or both the powers [28,29] resulted in a higher etching rate [30], while raising the ICP power and/or gas pressure [31] leads to an increase in the etching rate as well as the undercut [32] in the masked area.…”
Section: Dry Etchingsupporting
confidence: 87%