Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Corbin, E.; Shaw, Michael J.; Kitchin, Matthew; Hagon, J. P.; Jaroš, M.

doi:10.1088/0268-1242/16/4/314

Cited by 16 publications

(14 citation statements)

References 31 publications

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“…For semiconductor devices, the interplay between microstructure, energy band and macro‐performance enables design flexibility. Through precise control on scale, shape, and composition, envelope wave function could be regulated through quantum confinement, achieving the tuning and tailoring of device performance . Such a method, nowadays known as band engineering, was originated by Esaki et al in 1970 .…”

Section: Introductionmentioning

confidence: 99%

Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures

Cai

Zhao

Xie

et al. 2019

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Interfaces in semiconductor heterostructures is of continuously greater significance in the trend of scaling materials down to the atomic limit. Since atoms tend to behave more irregularly around interfaces than in internal materials, accurate energy band alignment becomes a major challenge, which determines the ultimate performance of devices. Therefore, a comprehensive understanding of the interplay between heterointerface, energy band, and macro‐performance is desiderated. Here, such interplay is explored by investigating asymmetric heterointerfaces with identical fabrication parameters in multiple‐quantum‐well lasers. The unexpected asymmetry derives from the atomic discrepancy around heterointerfaces, which ultimately improves the optical property through altered valence band offsets. Strain and charge distribution around heterointerfaces are characterized via geometric phase analysis and in situ bias electron holography, respectively. Combining experiments with theories, arsenic‐enrichment at one of the interfaces is considered the origin of asymmetry. To reveal actual band alignment, valence band model is modified focusing on the transition around heterojunctions. The enhanced photoluminescence intensity reflects the alleviation of hole confinement insufficiency and the enlargement of valence band offset. The results help to advance the understanding of the general problem of interface in nanostructures and provide guidance applicable to various scenarios for micro–macro correlation.

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Section: Introductionmentioning

confidence: 99%

Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures

Cai

Zhao

Xie

et al. 2019

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“…As it is difficult for the MCT to achieve large area uniformity and stability, the ABCS superlattice materials is generally considered as the preferred materials of the third-generation infrared detectors [6][7]. In principle, the bandgap of the ABCS superlattice materials can be tailored to cover the entire spectrum area of infrared detection by adjusting the thickness and composition of the ABCS materials [19].…”

Section: Infrared Detectorsmentioning

confidence: 99%

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

Engineering

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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

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“…For a fixed GaSb layer thickness, the bandgap of this binary/binary superlattice decreases when the InAs layer thickness increases. For example, calculations by Corbin et al 10 show that if GaSb layer thickness is fixed at 10 monolayers, the bandgap of the superlattice is about 250 meV at an InAs width of 8 monolayers and decreases to about 100 meV at an InAs width of 16 monolayers. However, the Type II band alignment also means that electrons tend to be localized within the InAs layer, whereas holes tend to be localized within GaSb layers.…”

Section: Advantages Of Type II Superlattice Infrared Materialsmentioning

confidence: 99%

Type II strained layer superlattice: a potential infrared sensor material for space

et al. 2008

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The Missile Defense Agency's Advanced Technology Office is developing advanced passive electro-optical and infrared sensors for future space-based seekers by exploring new infrared detector materials. A Type II strained layer superlattice, one of the materials under development, has shown great potential for space applications. Theoretical results indicate that strained layer superlattice has the promise to be superior to current infrared sensor materials, such as HgCdTe, quantum well infrared photodetectors, and Si:As. Strained layer superlattice-based infrared detector materials combine the advantages of HgCdTe and quantum well infrared photodetectors. The bandgap of strained layer superlattice can be tuned for strong broadband absorption throughout the short-, mid-, long-, and very long wavelength infrared bands. The electronic band structure can be engineered to suppress Auger recombination noise and reduce the tunneling current. The device structures can be easily stacked for multicolor focal plane arrays. The III-V semiconductor fabrication offers the potential of producing low-defect-density, large-format focal plane arrays with high uniformity and high operability. A current program goal is to extend wavelengths to longer than 14 µm for space applications. This paper discusses the advantages of strained layer superlattice materials and describes efforts to improve the material quality, device design, and device processing.

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Systematic study of type II Ga_1-xIn_xSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

Cited by 16 publications

References 31 publications

Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures

Heterointerface‐Driven Band Alignment Engineering and its Impact on Macro‐Performance in Semiconductor Multilayer Nanostructures

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Type II strained layer superlattice: a potential infrared sensor material for space

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