Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

Wen, Huang-Chun; Alshareef, Husam N.; Luan, H.F.; Choi, Kihyun; Lysaght, Patrick; Harris, H. R.; Huffman, C.; Brown, George; Bersuker, G.; Zeitzoff, P.; Huff, Howard R.; Majhi, P.; Lee, B.H.

doi:10.1109/.2005.1469206

Cited by 19 publications

(17 citation statements)

References 2 publications

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“…Physical-analysis data are not available to corroborate our hypothesis. However, the effects of silicon on EWF modulation found in this letter support the previous reported results [14]. On the other hand, it is worthwhile to point out that there has been contradicting results in which silicon has been shown to enhance the Fermi level pinning at the metal-high-κ interface [15], [16].…”

Section: Resultssupporting

confidence: 88%

NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

Thareja

Wen²,

Harris

et al. 2006

IEEE Electron Device Lett.

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Reduction in effective work function (EWF) of midgap-tantalum nitride (TaN) metal gate with gadolinium-oxide buffer layer on Hafnium-based high-κ gate stack has been demonstrated. EWF of 4.2 eV is achieved for TaN with a bilayer arrangement of Gd 2 O 3 /HfSiO x dielectric. By using Gd-Si cosputtered layer on HfO 2 , a reduction in EWF to nMOS compatible value of 4.05 eV is obtained. Electrical and material characterization indicate that the conversion of gadolinium to gadolinium oxide and presence of silicon in the high-κ layer are responsible for the EWF shift. nMOSFETs with improved output current, transconductance, and channel electron mobility highlight the approach of using gadolinium in the gate stack.

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Section: Resultssupporting

confidence: 88%

NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

Thareja

Wen²,

Harris

et al. 2006

IEEE Electron Device Lett.

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“…When not specified, the La 2 O 3 is 10 Å thick. The La 2 O 3 was deposited at 250 • C from La(thd) 3 and O 3 [16]. Nitrogen was introduced by plasma nitridation (PN) [17] at 25.9 kJ and annealed in O 2 at 900 • C. One wafer was nitrided at lower energy (7.0 kJ) with the O 2 anneal at 800 • C (PN L ).…”

Section: Methodsmentioning

confidence: 99%

“…The exploration of a vast set of metals [2], [3] has proven the task of finding suitable metals difficult, especially since the effective work functions φ m,eff tend toward midgap as CMOS-compatible thermal budgets are employed [4]. Recently, the use of thin cap layers that are inserted between the metal and dielectric has been shown to alleviate this by shifting the φ m,eff toward the band edges.…”

Section: Introductionmentioning

confidence: 98%

Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates

Ragnarsson

Chang

Hónɡ

et al. 2007

IEEE Electron Device Lett.

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Conduction band-edge effective work functions (φ m,eff ) are demonstrated with TaC x and TiN by means of La 2 O 3 capping of HfSiO x in a gate-first process flow with CMOScompatible thermal budget. With TaC x , a 10-Å-thick La 2 O 3 cap results in a φ m,eff of 3.9 eV with a low equivalent oxide thickness (EOT) increase (1-2 Å) and unaffected electron mobility. With TiN, non-nitrided La 2 O 3 capping results in a smaller φ m,eff reduction at a larger EOT increase, while with post-cap nitridation, the TiN φ m,eff is lower at a smaller EOT increase. Results show that the choice of metal and nitridation conditions have significant effects on La 2 O 3 capped stacks.

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“…Ternary Si-M-N materials exhibit outstanding high-temperature stability as well as good mechanical and interesting electrical properties. 18,19 Thus, Si-M-N ceramics such as TaSiN, MoSiN, TiSiN and HfSiN were exhibit effective work function values in the range of 4.16 to 4.8 eV 20 and high dielectric constants (ε = 5-15, dielectric constant values changed with the variation of metal and silicon content), [21][22][23] making them attractive candidates for e.g. nano/micro electro mechanical systems (NEMS/MEMS).…”

Section: Introductionmentioning

confidence: 99%

Synthesis and high-temperature evolution of single-phase amorphous Si–Hf–N ceramics

Zhou

Gao

et al. 2015

Journal of the European Ceramic Society

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Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications

Cited by 19 publications

References 2 publications

NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

NMOS Compatible Work Function of TaN Metal Gate With Gadolinium Oxide Buffer Layer on Hf-Based Dielectrics

Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates

Synthesis and high-temperature evolution of single-phase amorphous Si–Hf–N ceramics

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