Synthesizing diamond film on Cu, Fe and Si substrate by in-liquid microwave plasma CVD

Gautama, Pria; Toyota, Hiromichi; Iwamoto, Yukiharu; Zhu, Xia; Nomura, Shinfuku; Mukasa, Shinobu

doi:10.1016/j.precisioneng.2017.04.003

Cited by 12 publications

(7 citation statements)

References 16 publications

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“…Gautama et al explored diamond synthesis using in‐liquid plasma, and reported that when growing diamond on Fe substrate, preprocessing with silicon featuring high chemical connectivity to carbon atoms and relatively low carbon diffusion coefficient has a useful effect . Specifically, Si film is sputtered on Fe substrate, and heat treatment in argon atmosphere is applied to form Si interlayer using thermal deformation and delamination.…”

Section: Resultsmentioning

confidence: 99%

“…Gautama et al explored diamond synthesis using in-liquid plasma, and reported that when growing diamond on Fe substrate, preprocessing with silicon featuring high chemical connectivity to carbon atoms and relatively low carbon diffusion coefficient has a useful effect. 14 tered on Fe substrate, and heat treatment in argon atmosphere is applied to form Si interlayer using thermal deformation and delamination. In our experiments, silicon substrates were irradiated with electrons under current about 20 mA/cm 2 so that diffusion of silicon atoms and delamination might occur due to thermal annealing.…”

Section: Evaluation Of Electron-irradiated Silicon Substratesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…On the other hand, regarding techniques other than solution growth, the electronic state and structure of substrate surface was reported to play an important role in DLC film deposition process. [12][13][14] In this context, we applied surface treatment to silicon substrates using slow electrons in argon plasma, and found that DLC-related peaks were uniformly observed over the whole deposition surface on substrates. As reported by Narishima et al, 15 recovery of atomic-level defects (athermal recrystallization phenomenon) occurred when silicon surface was irradiated with slow electrons of about 70 eV or lower.…”

Section: Introductionmentioning

confidence: 99%

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Deposition of uniform carbon film on silicon substrate by chemical solution process

Hashimoto

Suzumura

2019

Elect Comm in Japan

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Uniform carbon film was grown on silicon substrate treated by low energy electron at temperature of 60° in the methanol solution. The treatment was carried out to modify the silicon surface by electron irradiation of 50 eV using electron‐beam‐excited plasma. From the results of Raman and X‐ray diffraction spectra, it was confirmed that the film is crystalline carbon containing small amounts of diamond component. The ID/IG ratio and work function of carbon film increased with increasing treatment time of the silicon substrate. The increases of ID/IG ratio and work function suggest that the carbon film had greater concentration of diamond component. On the other hand, the surface roughness and work function of the silicon substrate increased due to an increase of treatment time. The variations of physical and electronic properties are attributed to carbon deposition during the growth process.

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Section: Resultsmentioning

confidence: 99%

Section: Evaluation Of Electron-irradiated Silicon Substratesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Deposition of uniform carbon film on silicon substrate by chemical solution process

Hashimoto

Suzumura

2019

Elect Comm in Japan

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“…We have developed an innovative technology, in-liquid plasma, that can generate and maintain a plasma in a liquid, and many positive results have been obtained for machining [5][6][7]. Because water plasma and alcohol plasma generate many hydroxyl radicals [8,9], they can be used as a strong oxidant.…”

Section: Introductionmentioning

confidence: 99%

Low Tool Wear Cutting Method Using H<sub>2</sub>O Radical

Toyota,

Shiraishi,

Goto

et al. 2023

SSP

Self Cite

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Tool wear is an important problem when cutting hard-to-cut materials such as stainless steel and nickel alloys. This unignorable disadvantage is caused by the diffusion of dissociated carbon atoms to the surface layer of the tool tip during the cutting process, and this has been confirmed by SEM/EDS analysis of worn tool tips. In this study, a novel cutting method is proposed in which chemically activated H2O molecules are introduced to the cutting tool tip in order to prevent tool wear by removing dissociated carbon atoms on the surface layer of the tool tip. In cutting experiments, stainless steel X5CrNi 18-10 (JIS SUS304), a cemented carbide tool tip, cutting oil, steam, and Ar plasma were used. Ar plasma was used for raising the steam temperature around the tool tip and chemically activating H2O molecules. From the results, the dissociated carbon and constituted knife edge were mostly removed by H2O steam and cutting oil without Ar plasma. However, in some cases using Ar plasma, the workpiece melted and tightly adhered to the cutting face of the tool tip. This suggests that the H2O steam temperature should be suitably controlled so as to remove carbon atoms effectively from the cutting face of the tool tip.

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Quantitative measurement of graphitic sp2 on single nanodiamonds with sub-monolayer sensitivity using differential interference contrast and photo-thermal microscopy

Hamilton,

Regan,

Payne

et al. 2024

Carbon

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Synthesizing diamond film on Cu, Fe and Si substrate by in-liquid microwave plasma CVD

Cited by 12 publications

References 16 publications

Deposition of uniform carbon film on silicon substrate by chemical solution process

Deposition of uniform carbon film on silicon substrate by chemical solution process

Low Tool Wear Cutting Method Using H<sub>2</sub>O Radical

Quantitative measurement of graphitic sp2 on single nanodiamonds with sub-monolayer sensitivity using differential interference contrast and photo-thermal microscopy

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