Deposition of uniform carbon film on silicon substrate by chemical solution process

Abstract

Uniform carbon film was grown on silicon substrate treated by low energy electron at temperature of 60° in the methanol solution. The treatment was carried out to modify the silicon surface by electron irradiation of 50 eV using electron‐beam‐excited plasma. From the results of Raman and X‐ray diffraction spectra, it was confirmed that the film is crystalline carbon containing small amounts of diamond component. The ID/IG ratio and work function of carbon film increased with increasing treatment time of the silicon substrate. The increases of ID/IG ratio and work function suggest that the carbon film had greater concentration of diamond component. On the other hand, the surface roughness and work function of the silicon substrate increased due to an increase of treatment time. The variations of physical and electronic properties are attributed to carbon deposition during the growth process.