Synthesis of Ti-doped DLC film on SS304 steels by Filtered Cathodic Vacuum Arc (FCVA) technique for tribological improvement

Bootkul, D.; Saenphinit, N.; Supsermpol, B.; Aramwit, C.; Intarasiri, S.

doi:10.1016/j.apsusc.2014.04.053

Cited by 36 publications

(7 citation statements)

References 10 publications

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“…Diamond-like carbon coatings doped with Ti (no more than 0.46 wt. %) showed both an acceptable wear rate and good adhesion to the substrate [11]. Other researchers also obtained an improvement in the characteristics of films upon metal doping [12][13][14].…”

Section: Introductionmentioning

confidence: 77%

Effect of sp3–sp2 Transformation on the Wear Rate of the DLC Coating

et al. 2022

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Based on the methods of non-equilibrium thermodynamics, it was found that the implementation of spontaneous processes with positive entropy production during friction leads to an increase in the wear intensity. Non-spontaneous processes with negative entropy production lead to a decrease in wear intensity. The tribological characteristics of diamond-like carbon (DLC) with different silicon content were studied. The wear intensity practically does not correlate with the friction coefficient. It is shown that DLC with the highest content of diamond-like inclusions (sp3) in the coating has the highest wear rate. In the same DLC, the most intense sp3–sp2 transformation during friction was observed. The sp3–sp2 transformation is a spontaneous process.

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Section: Introductionmentioning

confidence: 77%

Effect of sp3–sp2 Transformation on the Wear Rate of the DLC Coating

et al. 2022

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“…and/or nonmetal (N, Si, and etc.) doping in the α‐C thin films to improve their mechanical and tribological properties and meanwhile to maintain amorphous structure . For instance, as the strong carbide element, Ti can chemically bond with C and N atoms forming hard TiC and TiN nanocrystalline phase in the films, while the non‐carbide Cu do not chemically bond with C, but they arrange themselves in the form of nanoparticles within the carbon matrix .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Ti and N binary‐doped ɑ‐C films deposited by pulse cathode arc with ionic source assistant

Zhou

Wang

Liu

et al. 2018

Surface & Interface Analysis

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Using ionic source assistant, Ti and N co‐doped amorphous C (α‐C:N:Ti) thin films were prepared by pulse cathode arc technique. Microstructure, composition, elemental distribution, morphology, and mechanical properties of α‐C:N:Ti films were investigated in dependence of nitrogen source, pulse frequency, and target current by Raman spectroscopy, X‐ray diffraction, scanning electron microscopy, X‐ray photoelectron spectroscopy, atomic force microscopy, nanoindentation, and surface profilometer. The results show the presence of titanium carbide and nitride in a‐C:N:Ti films. The α‐C:N+:Ti film (6 Hz, 60 A) shows the smaller size and the higher disordering degree of Csp2 clusters. The α‐C:N+:Ti films present smoother surface and smaller particle size than for α‐C:N2:Ti films. N ions facilitate the formation of N‐sp3C bonds in the α‐C:N+:Ti films, and α‐C:N+:Ti (10 Hz, 80 A) film possesses the more graphite‐like N bonds. Higher hardness and lower residual stress present in the α‐C:N2:Ti (10 Hz, 80 A) film.

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“…On the one hand, high residual stress ranging from 1~10 GPa lead to spall off from metallic substrates, at the same time, limit the film thickness [6][7][8]. This one could be effectively solved by the doping elements such as Ti, Cr, W and so on [9][10][11]; On the other hand, weak adhesive strength at the boundary between the film and substrate, which could be solved by the introduction of the addition Me, Me X C, Me X N interlayer [12][13][14]. Above mentioned these attempts to enhance the adhesion have proved to be very successful, but most works are based on the cost of sacrificing the mechanical properties [15][16].…”

Section: Introductionmentioning

confidence: 97%

“…The major Raman spectra could be deconvoluted into the two Gaussian peaks: D peak, due to the breathing modes of sp 2 atoms only in aromatic rings, is located at around 1380 cm -1 ; G peak, attributed to the bond stretching of sp 2 atom in both aromatic rings and chains, is located at about 1550 cm -1[23]. Normally, I D /I G ratio (the relative intensity ratio of the D peak and G peak) and the G peak position were used to qualitatively characterize the sp 2 /sp 3 ratio, and the I D /I G ratio and the G peak position increase with the increase of sp 2 /sp 3 ratio[9]. As shown inFig.4, the G peak position shifts from 1563.57 cm -1 to 1560.9 cm -1 with the increase of the W content from 0 to 0.71 with the increase of the W content from 0 to 2.6 at.%, and then monotonously increases from 0.71 to 1.14 with the increase of the W content from 2.6 at.% to 34.5 at.%, which indicates the highest sp 3 content could be obtained for the film with 2.6 at.% W content.…”

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confidence: 99%