Synthesis of polyimides containing triphenylamine‐substituted triazole moieties for polymer memory applications

Wang, Kun‐Li; Liu, Yiliang; Shih, I-Hao; Neoh, K. G.; Kang, En‐Tang

doi:10.1002/pola.24387

Cited by 79 publications

(57 citation statements)

References 41 publications

(42 reference statements)

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“…The excellent memory performance further demonstrates the advantages of PI derivatives for memory device applications. A series of PIs P18a-f containing TPA-substituted triazole moieties were developed, 72 and a memory device based on polymer P18a exhibited WORM memory behavior with excellent device performance, such as a high ON/OFF current ratio (10 5 ) and good stability. According to theoretical calculations, the memory mechanism can be assigned to electric field-induced 'conformation-coupled CT'.…”

Section: Worm Propertiesmentioning

confidence: 99%

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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This review summarizes the most widely used mechanisms in high-performance polymeric resistive memory devices, such as charge transfer, space charge trapping and filament conduction. In addition, recent studies of functional high-performance polymers for memory device applications are reviewed, compared and differentiated based on the mechanisms and structural design methods used. By carefully designing the polymeric structure based on these systematically investigated switching mechanisms, almost all types of current memory characteristics can be reproduced, and these memory properties show extremely high endurance during long-term operation, which makes polyimides very suitable materials for memory applications. INTRODUCTION High-performance polymersToday, life without polymers is unimaginable. Polymers have become the major synthetic materials of the 21st century. High-performance polymers (HPPs) are particularly desirable. The synthesis and development of HPPs over the past 30 years have drawn the attention of many polymer scientists and investigators. These polymers generally possess excellent physical deformation resistance and chemical deterioration resistance at high temperatures over long periods of time. The quest for HPPs began in the late 1950s to meet the demands of the military, aerospace, machine-building and electronics industries, among many other industrial applications.Hill and Walker 1 first noted that the incorporation of aromatic segments into a polymer generally results in a notable increase in its thermal stability. For this reason, much of the research work has been directed toward aromatic compositions. Hence, HPPs usually tend to contain large numbers of aromatic units in their structures. Several of these aromatic HPPs have been used for commercial applications, such as aromatic polyamides, polyimides, polyesters, polysulfones, polytriphenylamine and heterocyclic polymers (Scheme 1). Aromatic polyamides (aramids) and polyimides, such as DuPont's Kevlar fiber and Kapton film, respectively, have been well known for a long time and constantly attract more interest than other HPPs for their useful properties, such as excellent thermal and oxidative stabilities, high mechanical strengths, low flammabilities and good chemical and radiation resistances. [2][3][4][5][6][7][8][9][10][11][12][13] However, the rigidity of the backbone and strong hydrogen bonding of these HPPs result in high melting or glass-transition

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Section: Worm Propertiesmentioning

confidence: 99%

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Yen

Liou

2015

Polym J

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“…[26][27][28] Herein, we have designed and synthesized two donor-acceptor alternate copolysiloxanes (PCzPhSi-alt-PDISi, PCzMSi-alt-PDISi) by incorporating good electron-donor carbazole derivatives and electron acceptor perylenediimide derivative units into a polysiloxane backbone. [26][27][28] Herein, we have designed and synthesized two donor-acceptor alternate copolysiloxanes (PCzPhSi-alt-PDISi, PCzMSi-alt-PDISi) by incorporating good electron-donor carbazole derivatives and electron acceptor perylenediimide derivative units into a polysiloxane backbone.…”

Section: Introductionmentioning

confidence: 99%

The synthesis and flash memory behavior of alternate copolymer containing carbazole donor and perylenediimide derivatives acceptor by the hybridization of organo-silicon

Tan

Sun

et al. 2015

J. Mater. Chem. C

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In this study, two new donor-acceptor alternate copolysiloxanes containing carbazole and PDI derivatives pendants (PCzMSi-alt-PDISi and PCzPhSi-alt-PDISi) were prepared. The two copolysiloxanes showed the resistor type memory behavior. The memory devices based on PCzMSi-alt-PDISi and PCzPhSi-alt-PDISi exhibited nonvolatile flash memory characteristics, with an ON/OFF current density ratio of 10 3 and low threshold voltages (less than 1 V). As far as we know, it is the first nonvolatile flash memory device reported with the lowest threshold voltage based on the copolymer due to high flexibility of Si-O bonds.The conformation change from the regiorandom and regioregular alignments and the charge transfer interactions between pendent carbazole donor and PDI acceptor moieties as well as the unstable CT complex explain their memory characteristics. Our results open a new way to prepare the low-energy cost flash memory devices with the donor-acceptor pendent polysiloxanes.

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“…The excited electrons transfer from a higher energy level donor moiety to a lower energy level acceptor moiety. 14,[16][17][18]21 In PI-DAn-AnDA, however, the LUMO energy level of dianhydride (DAn) unit are higher than LUMO enegry level of diamine (AnDA) unit. This result of molecular simulation also supports the filament formation as the switching mechanism rather than CT mechanism.…”

Section: 37mentioning

confidence: 96%

“…This location of energy states and molecular orbital transitions are different from those in the conventional CT complex-based polyimide memory systems. 14,[16][17][18]21 The CT complex memory systems have higher LUMO energy levels of donor (i.e., diamine) units than LUMO enegry levels of acceptor (i.e., dianhydride) units. In the CT mechanism, when the applied electric field reaches the switch-on voltage, some electrons at the HOMO transit to the LUMO of the donor unit, resulting in an excited state.…”

Section: 37mentioning

confidence: 99%

Fully transparent nonvolatile resistive polymer memory

Kim

Lee

et al. 2015

J. Polym. Sci. Part A: Polym. Chem.

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We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene-containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write-once-read-many times (WORM) memory behavior with an ON/OFF current ratio of 2 3 10 3 , and the ratio remained without any significant degradation for over 10 4 s. The memory behavior of the device is considered to be governed by trap-controlled space-charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device.

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Synthesis of polyimides containing triphenylamine‐substituted triazole moieties for polymer memory applications

Cited by 79 publications

References 41 publications

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

The synthesis and flash memory behavior of alternate copolymer containing carbazole donor and perylenediimide derivatives acceptor by the hybridization of organo-silicon

Fully transparent nonvolatile resistive polymer memory

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