2015
DOI: 10.1038/pj.2015.87
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Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Abstract: This review summarizes the most widely used mechanisms in high-performance polymeric resistive memory devices, such as charge transfer, space charge trapping and filament conduction. In addition, recent studies of functional high-performance polymers for memory device applications are reviewed, compared and differentiated based on the mechanisms and structural design methods used. By carefully designing the polymeric structure based on these systematically investigated switching mechanisms, almost all types of… Show more

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Cited by 71 publications
(35 citation statements)
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“…Triarylamine-based molecules are widely studied in organic electronics fort heir versatile properties. [1][2][3][4][5][6][7][8][9][10][11][12] For attainingg ood conductive properties,i ti sc rucial to achieve aw ell-organized microstructure in which defects and localized electronic states are minimized. [13,14] Recent research demonstrates that the ability to exert full control during the formation of the desired nanostructures enhances the performance of functional materials.…”
Section: Introductionmentioning
confidence: 99%
“…Triarylamine-based molecules are widely studied in organic electronics fort heir versatile properties. [1][2][3][4][5][6][7][8][9][10][11][12] For attainingg ood conductive properties,i ti sc rucial to achieve aw ell-organized microstructure in which defects and localized electronic states are minimized. [13,14] Recent research demonstrates that the ability to exert full control during the formation of the desired nanostructures enhances the performance of functional materials.…”
Section: Introductionmentioning
confidence: 99%
“…In the previous studies, many mechanisms were proposed for the resistance switch in memory devices,s uch as phase transition mechanism, [19] charge trapping mechanism, [20] charge transfer [21] and the formationo ff ilament mechanism, [22] electron tunneling mechanism, ferroelectric effect and metal filament mechanism, [23] magnetoelectric couplingm echanism and others. [24] The charge trapping-induced conductive filament are most likely responsible to our ternary memory device of polydopamine because of the following evidence. We first investigated the relationship between the top electrode's (Al) areas with current level of the three resistance states based on as tatistic on as ample size of 50 by varying the electrode area from 0.0078 mm 2 ,0 .031 mm 2 to 0.071 mm 2 (Figure 7a).…”
Section: Resultsmentioning
confidence: 99%
“…[8][9][10][11] Pendant groups should meet the requirements of thermal stability and high electron affinity or low ionization potential, because energies of their boundary molecular orbit- als determine the corresponding redox potentials. [13] The reversibility towards electron transfer is a desirable requirement for pendant groups because they should not undergo chemical decomposition initiated by electron addition or ionization. Elaboration of new pendant groups with low redox potentials is an important task because too high ON and OFF switching voltage determined by, for example, carbazole and triphenylamine pendant groups (> 2 V) [8,12] results in high OFF currents.…”
Section: Introductionmentioning
confidence: 99%