Mussel‐Inspired Polydopamine Coating for Flexible Ternary Resistive Memory

Abstract

In recent years, numerous organic molecules and polymers carrying various functional groups were synthesized and used in fabrication of wearable electronic devices. Compared to previous materials that suffer from poisonousness, stiffness and complex film fabrication, we circumvent above matters by taking advantage of mussel-inspired polydopamine as our active material to realize resistive random access memories (RRAMs). Polydopamine thin films were grown on indium tin oxide glass catalyzed by Cu SO /H O and characterized by Fourier infrared spectroscopy (FT-IR), UV/Vis spectroscopy and scanning electron microscopy. The Al/Polydopamine film/ITO devices possess ternary memory behavior with good ternary device yield with two threshold voltages around 1.50 V and 3.50 V, long data retention over 10 s of continuous reading or 10 pulse reading. The two resistance switchings are attributed to defects functioning as charge traps and the formation of conductive filaments. A flexible device based on Al/polydopamine film/ITO/polyethylene terephthalate retains its ternary memory behavior after being bent with a bending radius of 1.54 cm and bending cycles up to 5000, demonstrating good compatibility and flexibility of polydopamine.

Boosting the Rate Capability of Aqueous Zinc-Ion Batteries Using VNxOy/C Spheres Derived from a Self-Assembled V-polydopamine Complex

“…The peaks at 1617 and 1601 cm –1 can be assigned to the vibrations of N–H bonds in DA-HCl, and the peaks at 1343 and 1286 cm –1 are related to O–H and C–O bending vibrations. , In V-PDA-300, the weak peaks at 1597 and 1278 cm –1 correspond to the vibration of N–H and C–O bonds while most of the absorption peaks in HCl-DA disappear after chelation. Moreover, a new peak around 1489 cm –1 attributed to C–N–C bending vibration is detected, which indicates the formation of an indole structure of PDA. , There are only several weak peaks in V-PDA-300 due to the association of absorption bands caused by the reduction of aromatic hydrogen and the influence of absorption vibration in indole structures . To further analyze the surface structure of V-PDA-300, X-ray photoelectron spectroscopy (XPS) and high-resolution XPS of V, O, C, and N elements are employed.…”

“…47,48 There are only several weak peaks in V-PDA-300 due to the association of absorption bands caused by the reduction of aromatic hydrogen and the influence of absorption vibration in indole structures. 49 To further analyze the surface structure of V-PDA-300, X-ray photoelectron spectroscopy (XPS) and high-resolution XPS of V, O, C, and N elements are employed. As can be seen in Figure 2f, the peaks of V, O, C, and N elements appeared in V-PDA-300.…”

Multi-Bit Biomemristic Behavior for Neutral Polysaccharide Dextran Blended with Chitosan

“…Organic memristors bear the unique advantage of flexibility, low-temperature processability, and diverse functionalities, having enormous potential in biodegradable artificial neuromorphic systems [ 14 , 15 ]. Mostly, they are made up of undecomposable, biologically incompatible, and sometimes even toxic materials, causing serious ecological challenges [ 16 , 17 , 18 ]. Hence, it is significant that biodegradable and renewable materials should be exploited so as to realize green ultra-high-density data-storage systems.…”

Ternary Memory Behavior of Carbazole‐Based Donor–Acceptor Polymer and CdS NPs Composites

“…Recently, in order to further improve the data storage density, researchers have designed and developed RRAM with multi‐level storage performance. [ 25–33 ] This kind of multi‐level memory has the potential to achieve a storage capacity of 3 n or even greater, and can better meet the needs of future computing systems than ordinary binary memories. Among them, the donor–acceptor (D–A) polymer has attracted wide attention because of its structural adjustability and the realization of multi‐level storage through charge transfer between the donor and acceptor.…”