The synthesis and flash memory behavior of alternate copolymer containing carbazole donor and perylenediimide derivatives acceptor by the hybridization of organo-silicon

Abstract

In this study, two new donor-acceptor alternate copolysiloxanes containing carbazole and PDI derivatives pendants (PCzMSi-alt-PDISi and PCzPhSi-alt-PDISi) were prepared. The two copolysiloxanes showed the resistor type memory behavior. The memory devices based on PCzMSi-alt-PDISi and PCzPhSi-alt-PDISi exhibited nonvolatile flash memory characteristics, with an ON/OFF current density ratio of 10 3 and low threshold voltages (less than 1 V). As far as we know, it is the first nonvolatile flash memory device reported with the lowest threshold voltage based on the copolymer due to high flexibility of Si-O bonds.The conformation change from the regiorandom and regioregular alignments and the charge transfer interactions between pendent carbazole donor and PDI acceptor moieties as well as the unstable CT complex explain their memory characteristics. Our results open a new way to prepare the low-energy cost flash memory devices with the donor-acceptor pendent polysiloxanes.

Control of Resistive Switching Voltage by Nanoparticle‐Decorated Wrinkle Interface

“…[1][2][3][4] Building polymer memory devices with low resistive switching voltage hold great importance in their fundamental study as well as the technical advancement of ultra-low power memory devices during their practical 3D integration. [7][8][9] However, most polymer memory devices remain at high resistive switching voltages in accordance to the research reported previously. [7][8][9] However, most polymer memory devices remain at high resistive switching voltages in accordance to the research reported previously.…”

“…Building polymer memory devices with low resistive switching voltage hold great importance in their fundamental study as well as the technical advancement of ultra‐low power memory devices during their practical 3D integration . To date, enormous efforts have been devoted to the rational design of memristive materials and their property studies, especially the achievement of Flash, write‐once‐read‐many times (WORM), and dynamic random access memory (DRAM) memory effect . However, most polymer memory devices remain at high resistive switching voltages in accordance to the research reported previously .…”

Highly Thermal Stable Polyimides Applied in Flexible Resistive Memory

“…It is understood that the charges inject into the memory layer will induce a countering space charge field, screen the applied external electric field, and inhibit further charge injection into the active layer. [50,51] Therefore, PIs with 6FDA could perform a less hindered charge conduction with a higher I on /I off during the trap filling regime with I ∼ V m+1 (m > 1). This result indicates the energy barrier between HOMO level of PIs and work function of Al electrode plays an important role in the hole trapping to fulfill a smooth transition from the OFF state to the ON state.…”

Mimicking Classical Conditioning Based on a Single Flexible Memristor

“…Unlike classical memristor-based nonvolatile memory devices, which show good switching endurance, [35][36][37][38] completely different switching characteristics were found when a series of voltage sweep cycles (3→−5→3 V) were sequentially applied to our device. Even though a repeatable resistanceswitching could be observed under both positive and negative bias voltages during the following voltage sweeps, the measured current at the high-resistance state continually increased with increasing number of scans.…”