Synthesis of N-doped SWNT using the arc-discharge procedure

Glerup, M.; Steinmetz, Johannes; Samaille, Damien; Stéphan, Odile; Enouz, S.; Loiseau, Annick; Roth, S.; Bernier, P.

doi:10.1016/j.cplett.2004.02.005

Cited by 257 publications

(171 citation statements)

References 21 publications

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“…S7). Instead there is an exceptionally sharp "molecular like" signature at the start of the σ * band, as shown in the partial p x-y -DOS; the rest of the σ * signal is significantly reduced compared to bulk N1s edge EELS measurements for nitrogen doped nanotube samples in the literature (26,31). We note that no apparent damage was observed after the acquisition of this SI ( Supplementary Fig.…”

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confidence: 66%

Atomic Configuration of Nitrogen-Doped Single-Walled Carbon Nanotubes

et al. 2014

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Abstract:Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomicallyresolved electron energy-loss spectroscopy to detect individual nitrogen dopants in single-walled carbon nanotubes and compared with first principles calculations. We demonstrate that nitrogen doping occurs as single atoms in different bonding configurations: graphitic-like and pyrroliclike substitutional nitrogen neighbouring local lattice distortion such as Stone-Thrower-Wales defects. The stability under the electron beam of these nanotubes has been studied in two extreme cases of nitrogen incorporation content and configuration. These findings provide key information for the applications of these nanostructures. Doped carbon nanotubes (NT), notably nitrogen-doped (CN x -NT), have attracted much attention because of their interesting physical and chemical properties (1)(2)(3)(4). Knowledge of the atomic arrangement of the dopant atoms in such nanostructures is essential for a complete understanding of the material's electronic properties, e.g. field emission (5) or transport (6) properties. This requires precision measurements, combining high spatial resolution and high spectroscopic sensitivity. Several techniques have been deployed with this aim, but until now none of them have provided the required information in such nanostructures. Most characterization techniques, such as Raman spectroscopy and x-ray absorption spectroscopy (XAS), have relatively low spatial resolution, of the order of hundreds of nanometers, and in some cases only provide indirect information (1,2). Thus, local structural and analytical methods are needed. Scanning tunneling microscopy (STM) and spectroscopy (STS) are local techniques for studying the structural and electronic features/properties of materials. Indeed, some studies have been reported on CN x -NT (7-9) and recently also on N-doped graphene (10,11). However, chemical characterization cannot be unambiguously performed from the STM/STS analysis. Indeed, the interpretation of the results remains complicated, as different local structures may give rise to similar features (7-11). In this sense, high-resolution transmission electron microscopy (HRTEM) and scanning TEM (STEM) combined with electron energy-loss spectroscopy (EELS) have provided very valuable and rich information at the atomic scale (12).Great progress has been made in (S)TEM due to the development of aberration-corrected microscopes (12)(13)(14). Recent work has demonstrated that annular dark-field imaging performed in a C s -probe corrected STEM enables quantitative atom-by-atom analysis of 2D low-Z materials such as h-BN (13). Single atoms have also been investigated via STEM-EELS in these materials (12,(14)(15)(16)(17)(18)(19)(20)(21). Three recent works have demonstrated the possibility to identify by STEM-EELS the presence of N atoms in graphene (19)(20)(21). In addition, N atoms have been also detected in Nimplanted multi-walle...

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confidence: 66%

Atomic Configuration of Nitrogen-Doped Single-Walled Carbon Nanotubes

et al. 2014

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“…399 Problems with incorporating B atoms into the carbon lattice of nanotubes have also been reported. 406 All of these issues further limit the applicability of these techniques. Low-energy ion-irradiation was suggested 267,408 as an alternative way to introduce B/N impurities into nanotubes.…”

Section: Irradiation-mediated Doping Of Carbon Nanotubes With Foreignmentioning

confidence: 99%

“…This is a natural choice of the dopant, as B and N atoms are the neighbors of C in the Periodic Table and thus have roughly the same atomic radius as C, while they possess one electron less or more than C, respectively. Several methods based on arc-discharge techniques 399,406 and substitutional reactions 401 have been developed for doping. Unfortunately, instead of occupying the substitutional sp 2 position in the graphitic network, a substantial part of the dopant is chemisorbed 407 on the nanotube surface or binds to irregular carbon structures in sp 3 sites.…”

Section: Irradiation-mediated Doping Of Carbon Nanotubes With Foreignmentioning

confidence: 99%

Ion and electron irradiation-induced effects in nanostructured materials

Krasheninnikov¹,

Nordlund²

2010

Journal of Applied Physics

922

591

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A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.

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“…that the B is more difficult than N to be incorporated into the graphite lattice. 10 For the as-grown BCN-SWNTs, we also succeeded in recording the energy-filtered elemental maps of B, C, and N, respectively. In Figure 2, the zero-loss and energy-filtered TEM images of two adjacent BCN-SWNT bundles are shown, where it can be seen that all constituting B, C, and N elements are homogeneously distributed within the SWNTs tube shells.…”

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confidence: 99%

Direct Synthesis of B−C−N Single-Walled Nanotubes by Bias-Assisted Hot Filament Chemical Vapor Deposition

et al. 2006

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Soon after the discovery of carbon nanotubes, the ternary system of BCN nanotubes began to attract increasing research interest. [1][2][3] A prime advantage of the BCN nanotubes over their carbon counterparts is the relative simplicity in controlling the tube electronic properties. 2,3 A pristine carbon single-walled nanotube (C-SWNT) may behave either as metal or as semiconductor with varying band gaps, depending sensitively on the tube diameter and chirality whose control remains a formidable challenge for all known synthetic methods. By contrast, the electronic structure of BCN nanotubes is predicted to be controlled largely by their chemistry rather than their geometry, such that the band gap could be tailored over a wide range merely by varying the tube's chemical composition. 2,3 Direct synthesis of the B-and N-doped multi-walled carbon nanotubes (BCN-MWNTs) was first attempted by Stéphan et al. in 1994. 2a Since then, considerable progress has been made in the synthesis of the ternary BCN-MWNTs and/or nanofibers by different means of arc-discharge, laser ablation, and chemical vapor deposition (CVD). 2,4,5 At the same time, theoretical understanding of the structural and electronic properties concerning the BCN nanotubes has also been largely advanced. 3,6 The majority of the theoretical work, however, has been dealing with the SWNT structures rather than MWNTs (or nanofibers). 3,6 There are clearly many fundamental differences between those two systems. 7 Importantly, it is only the SWNTs' structure that would make the study of their intrinsic structural and physical properties easier and more valuable. 3,[6][7][8] In this regard, exploring synthetic methods for producing high-quality ternary BCN-SWNTs is highly desirable, though it seems to be an even more difficult task. Up to now, the only existing example of the ternary BCN-SWNTs synthesis was achieved via an alternative post-growth treatment route, that is, by substitution reaction of the presynthesized pristine C-SWNTs with B 3 O 2 and N 2 at high temperature. 9 As far as the direct synthesis route is concerned, although a few studies showed the possibility of direct doping of C-SWNTs solely with B or N, 10,11 evidences for the presence of the ternary SWNTs simultaneously composed of the B, C, and N elements have not been identified yet.Herein, we report on the direct, large-scale synthesis of ternary BCN-SWNTs via a bias-assisted hot filament CVD (HF-CVD) process. The same HF-CVD system has previously been used in our group to grow turbostratic BCN films and oriented BCN MWNTs. 12 This work is a continuation of our ongoing efforts toward the rational growth of BCN nanostructures. In the present contribution, the BCN-SWNTs' growth by HF-CVD was achieved over the powdery MgO-supported Fe-Mo bimetallic catalyst (denoted as Fe-Mo/MgO), by using CH 4 , B 2 H 6 , and ethylenediamine vapor as the reactant gases. Details of the catalyst preparation and the HF-CVD growth process are presented in the Supporting Information.In Figure 1a, we display the...

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Synthesis of N-doped SWNT using the arc-discharge procedure

Cited by 257 publications

References 21 publications

Atomic Configuration of Nitrogen-Doped Single-Walled Carbon Nanotubes

Atomic Configuration of Nitrogen-Doped Single-Walled Carbon Nanotubes

Ion and electron irradiation-induced effects in nanostructured materials

Direct Synthesis of B−C−N Single-Walled Nanotubes by Bias-Assisted Hot Filament Chemical Vapor Deposition

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