Synthesis of high-quality AlN films on (La,Sr) (Al,Ta)O3 substrates by pulsed laser deposition

Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shunhua; Lin, Zhien; Wang, Haiyan; Qian, Huirong; Li, Guoqiang

doi:10.1016/j.matlet.2014.10.148

Cited by 7 publications

(5 citation statements)

References 12 publications

(35 reference statements)

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“…To overcome this issue, pulsed laser deposition (PLD) is deployed. PLD can supply high-energy and assist the migration of the precursors on the surface, and therefore make the films growth at low temperature possible 18 19 . The low temperature growth not only can effectively suppress the interfacial reactions between films and substrates, but also reduces the energy consumption 20 21 .…”

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confidence: 99%

“…On the other hand, the diffraction patterns of AlN and GaN along [11 0] direction are obtained under the same conditions. These two aspects make us to conclude that an in-plane epitaxial relationship of AlN[11 0]//GaN[11 0] between AlN and GaN can be determined 18 19 . By the combination of our previous results 18 19 28 , an in-plane epitaxial relationship of Si[1 0]//AlN[11 0]//GaN[11 0] can be obtained for GaN films grown on Si substrates with AlN buffer layer.…”

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confidence: 99%

“…5a is a typical XRD 2 θ - ω scan for GaN films grown on AlN/Si hetero-structures at various temperatures. The peaks located at 2 θ = 34.56° and 72.64° are the diffractions of GaN(0002) and GaN(0004), respectively 19 ; and the peaks observed at 2 θ = 36.02° and 76.50°are the diffractions of AlN(0002) and AlN(0004), respectively 18 . While the peaks found at 2 θ = 28.44°, 58.90° and 95.02°are the diffractions of Si(111), Si(222) and Si(333), respectively 28 .…”

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Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

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Yang

Lin

et al. 2015

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2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

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Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Wang

Yang

Lin

et al. 2015

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“…The average grains size was 10-60 nm, as determined with the Scherrer equation. We mention that high-quality AlN (002) films were synthesized by PLD on (La,Sr)(Al,Ta)O 3 substrates [53]. According to [54], higher laser fluence and substrate temperature and lower ambient pressure are beneficial for PLD synthesis of AlN thin films with the (002) orientation.…”

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Pulsed Laser Deposition of Aluminum Nitride Films: Correlation between Mechanical, Optical, and Structural Properties

et al. 2019

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Aluminum nitride (AlN) films were synthesized onto Si(100) substrates by pulsed laser deposition (PLD) in vacuum or nitrogen, at 0.1, 1, 5, or 10 Pa, and substrate temperatures ranging from RT to 800 °C. The laser parameters were set at: incident laser fluence of 3–10 J/cm2 and laser pulse repetition frequency of 3, 10, or 40 Hz, respectively. The films’ hardness was investigated by depth-sensing nanoindentation. The optical properties were studied by FTIR spectroscopy and UV-near IR ellipsometry. Hardness values within the range of 22–30 GPa and Young’s modulus values of 230–280 GPa have been inferred. These values were determined by the AlN film structure that consisted of nanocrystallite grains, strongly dependent on the deposition parameters. The values of optical constants, superior to amorphous AlN, support the presence of crystallites in the amorphous film matrix. They were visualized by TEM and evidenced by FTIR spectroscopy. The characteristic Reststrahlen band of the h-AlN lattice with component lines arising from IR active phonon vibrational modes in AlN nanocrystallites was well detectable within the spectral range of 950–500 cm−1. Control X-ray diffraction and atomic force microscopy data were introduced and discussed. All measurements delivered congruent results and have clearly shown a correlation between the films’ structure and the mechanical and optical properties dependent on the experimental conditions.

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“…Recently, group III-nitrides such as AlN [1,2], GaN [3][4][5], and InN [6], as well as their alloys have attracted remarkable considerations due to their inherent properties [7][8][9], which make them possible for applications in optoelectronic devices [10]. At present, sapphire is still the most popular commercial substrate for epitaxial growth of group III-nitride devices.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of high-quality AlN films on (La,Sr) (Al,Ta)O3 substrates by pulsed laser deposition

Cited by 7 publications

References 12 publications

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Pulsed Laser Deposition of Aluminum Nitride Films: Correlation between Mechanical, Optical, and Structural Properties

Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

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