Synthesis of Bi/Sb multilayer structures

Jałochowski, M.

doi:10.1002/pssa.2210950147

Cited by 6 publications

(1 citation statement)

References 12 publications

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“…In order to make a more faithful interpretation of x-ray diffraction patterns a few models of non-ideal structure have been proposed [9-151. The Bi-Sb superlattice was studied earlier by Jalochowski [16]. Mitura and Mikoiajczak recommended the use of their statistical model of the superlattice structure [13].…”

Section: Introductionmentioning

confidence: 99%

Growth of the Bi-Sb superlattice

Gładyszewski

Mikołajczak

Mitura

et al. 1989

J. Phys.: Condens. Matter

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Bi-Sb multilayered thin films described in the paper were produced by evaporation in a diffusion vacuum system. X-ray diffraction measurements were the main method of investigating the structure of the films. Depending on the substrate temperature during the preparation of the samples, different types of texture were observed: (110) or/and (111). The samples produced at 170 K (showing strong (110) texture) were subjected to a detailed scrutiny. Computer-simulated x-ray spectra based on a statistical model of the superlattice structure were applied in the analysis.

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Section: Introductionmentioning

confidence: 99%

Growth of the Bi-Sb superlattice

Gładyszewski

Mikołajczak

Mitura

et al. 1989

J. Phys.: Condens. Matter

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Interface states in Bi/Bi1−xSbx heterojunctions

Agassi

Chu

1987

Applied Physics Letters

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A novel, band-inverted semiconductor junction is proposed. The heterojunction consists of two column V semimetals that have undergone a semimetal-semiconductor transition, i.e., a thin Bi film of thickness ∼100 Å and a Bi1−xSbx alloy with 0.06<x<0.3. Such a junction will support the recently predicted interfacial states. Results of calculations on the dispersion relation and optical transitions pertaining to the interfacial states are presented. It is shown that the optical transition rate between an interfacial state and the conduction state is comparable to that of a conduction-valence band transition. It is also shown that the optical transitions have very interesting polarization dependences.

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Energy band structure of Bi-Bi_1-xSb_xcompositional superlattices

Mustafaev¹

1994

J. Phys.: Condens. Matter

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Within the McClure model a dispersion equation for the energy spectrum of the Bi-Bi1-xSbx superlattices in the envelope function approximation is derived. The effective mass of minibands, the Fermi energy and the concentration of free carriers in a superlattice with X=0.1 and the period d=10 nm are determined. The dependence of the miniband energy upon the ratio r=dI/dII is obtained (dI is the thickness of the Bi layers and dII is the thickness of the alloy layers). It is shown that there is a transition from the semiconducting state (r<0.31) to the semimetallic state (r>0.31) in the superlattice with X=0.1 and d=10 nm due to an energy overlap between the minibands at the L and T points of the Brillouin zone. For dI=4 nm and dII=6 nm the Fermi surface of electrons is closed whereas the Fermi surface of holes is open in the direction of the superlattice wavevector q. In the superlattice with X=0.12 and dI=dII=60 nm the transverse components of the effective-mass tensor change signs at a certain value of q=qo. As a result, at q>q0 the dependence of the miniband energy on the wavevector k in the plane of layers has a shape like a 'camel's back'.

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Synthesis of Bi/Sb multilayer structures

Cited by 6 publications

References 12 publications

Growth of the Bi-Sb superlattice

Growth of the Bi-Sb superlattice

Interface states in Bi/Bi1−xSbx heterojunctions

Energy band structure of Bi-Bi_1-xSb_xcompositional superlattices

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Synthesis of Bi/Sb multilayer structures

Cited by 6 publications

References 12 publications

Growth of the Bi-Sb superlattice

Growth of the Bi-Sb superlattice

Interface states in Bi/Bi1−xSbx heterojunctions

Energy band structure of Bi-Bi1-xSbxcompositional superlattices

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Product

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Energy band structure of Bi-Bi_1-xSb_xcompositional superlattices