Interface states in Bi/Bi1−xSbx heterojunctions

Abstract

A novel, band-inverted semiconductor junction is proposed. The heterojunction consists of two column V semimetals that have undergone a semimetal-semiconductor transition, i.e., a thin Bi film of thickness ∼100 Å and a Bi1−xSbx alloy with 0.06<x<0.3. Such a junction will support the recently predicted interfacial states. Results of calculations on the dispersion relation and optical transitions pertaining to the interfacial states are presented. It is shown that the optical transition rate between an interfacial state and the conduction state is comparable to that of a conduction-valence band transition. It is also shown that the optical transitions have very interesting polarization dependences.

Evaluation of a Pre-Objective Scan System for the Laser Recrystallization of Silicon on Insulator Material

“…Also of interest are the alloys of bismuth and antimony, since these are known to exhibit a transition from semimetallic to semiconducting behaviour for Sb concentrations near 6 % [3]. In fact, a new band-inverted semiconductor junction involving Bi/Bi, -,Sb, heterojunctions has been proposed [4] that may contain subbands of a new type [S] in its gap. The grcwth of epitaxial Bi and Bi-Sb films is the first necessary step in investigating such structures.…”