Growth and characterization of bismuth and antimony thin films

Martı́nez, Antonio; Collazo, Ramón; Berrios, Andrés; Ducoudray, G.O.

doi:10.1016/s0022-0248(97)00042-0

Cited by 7 publications

(6 citation statements)

References 14 publications

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“…Resch-Esser et al [2] and Martinez et al [12] have previously reported that annealing at approximately 180°C led to the crystallisation of thin, amorphous antimony overlayers on GaAs(001) and Si(111) substrates. Scanning electron microscopy and X-ray diffraction have shown [13] that amorphous films of antimony have a higher level of structural disorder, and consist of an open structure of spheroidal particles, whereas polycrystalline films consist of large, homogeneously distributed, crystallites.…”

Section: In Situ X-ray Diffraction Measurements During the Decapping mentioning

confidence: 99%

An investigation of the growth and removal of protective antimony caps for antimonide epilayers

et al. 2006

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Section: In Situ X-ray Diffraction Measurements During the Decapping mentioning

confidence: 99%

An investigation of the growth and removal of protective antimony caps for antimonide epilayers

et al. 2006

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“…The electrical transport measurements are highly suitable to know the electronic properties of such films; the system becomes quasi-two-dimensional as the film thickness decreases. The transport measurements of crystalline antimony films deposited on insulating substrate have been reported by several authors [3,4]. The antimony thin films grown on Si substrate induce quantum size effect due to semimetal-semiconductor transitions [4].…”

Section: Introductionmentioning

confidence: 96%

“…The transport measurements of crystalline antimony films deposited on insulating substrate have been reported by several authors [3,4]. The antimony thin films grown on Si substrate induce quantum size effect due to semimetal-semiconductor transitions [4]. Thin film of antimony oxide can be useful for gas sensing materials, electrocatalysts, capacitors, photoconductors and as a constituent of electrochromic devices [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

Shafa

Wang

Naz

et al. 2016

Materials Science-Poland

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Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD) of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 10 22 Ω·cm −3 and mobility of 9.034 cm 2 /Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

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“…8 Characterization of bismuth can be provided by x-ray diffraction, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and electron microscopy. [14][15][16] This work aims to deliver bismuth spectra for a broad range of primary ion beam energies and to define them as a bismuth reference. The oscillatory behavior of absolute ion yields of 4 He + scattered on the Bi target is demonstrated by the joint plot of all 52 spectra (Fig.…”

Section: Introductionmentioning

confidence: 99%

Bismuth, by high-sensitivity low energy ion scattering

Vaníčková,

Průša,

Šikola

2023

Surface Science Spectra

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Low energy ion scattering is an analytical technique with extreme surface sensitivity. It enables qualitative and quantitative elemental analysis of the outermost atomic layer. Straightforward quantification is possible by using well-defined reference samples, as the measured signal is related to known surface atomic concentration. Bi, like Pb, exhibits strong oscillatory behavior of backscattered ion yield when primary ion beam energy is varied. Here, we present the spectra of bismuth obtained by scattering of 4He+ ions in a wide range of energies (0.5–6.0 keV). These should cover a regularly used range of energies for He analysis and serve as standards or reference spectra for analysis of bismuth if the scattering angle is 145° or similar. For this purpose, high-purity foil cleaned by ion sputtering was used. The sensitivity of the instrument in use (high-sensitivity low energy ion scattering spectrometer) is defined by the 3 keV 4He+ spectrum of copper. The related atomic sensitivity and relative sensitivity factors are determined.

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Growth and characterization of bismuth and antimony thin films

Cited by 7 publications

References 14 publications

An investigation of the growth and removal of protective antimony caps for antimonide epilayers

An investigation of the growth and removal of protective antimony caps for antimonide epilayers

Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

Bismuth, by high-sensitivity low energy ion scattering

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