Synthesis of beta silicon carbide powders using carbon coated fumed silica

Koç, Raşit; Cattamanchi, Sai V

doi:10.1023/a:1004392900267

Cited by 71 publications

(47 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The above reaction needs temperatures higher than 1754 °C to proceed under equilibrium conditions at atmospheric pressure [18], but it has been demonstrated to occur at much lower temperatures under nonequilibrium conditions. For example, Byon and Choi [19] have taken advantage of the same carbothermal reaction at 830 °C and have shown that carbon nanotubes can be used as both a guide and carbon source for the etching of nanotrenches into SiO 2 surfaces.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Crystallographically selective nanopatterning of graphene on SiO2

et al. 2010

View full text Add to dashboard Cite

Graphene has many advantageous properties, but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications, for example, field-effect transistors. This problem can be circumvented by opening up a confinement-induced gap, through the patterning of graphene into ribbons having widths of a few nanometres. The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges. Therefore, etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after. In this contribution we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges. We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision.

show abstract

Section: Introductionmentioning

confidence: 99%

“…White spots on the AFM images are the remnants of the Scotch tape material and have no effect on the oxidation or annealing processes (for more information see Ref. [18]) the very slow removal of carbon. The fact that the edges are so well formed (see Fig.…”

Section: Introductionmentioning

confidence: 99%

Crystallographically selective nanopatterning of graphene on SiO2

et al. 2010

View full text Add to dashboard Cite

show abstract

“…As the removal of carbon atoms proceeds along a specific crystallographic direction the etch pits will exhibit the symmetry of the honeycomb graphene crystal lattice. It is well known that solid C can reduce SiO 2 at high temperatures (over 1754 o C) and is an important synthesis step in obtaining SiC from SiO 2 and C [14]. Recently this type of SiO 2 reduction has been carried out at a much lower temperature of 830 o C by Byon and Choi to etch nanotrenches into silicon oxide using carbon nanotubes as the carbon source and template [15].…”

Section: Introductionmentioning

confidence: 99%

“…The Gibbs free energy of the reaction is positive up to 1514 o C [14]. However, the reaction can take place at lower temperature due to the continuous removal of the gaseous CO and the volatile SiO, displacing the reaction balance to the right side of the equation presented (eq.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic orientation dependent etching of graphene layers

Nemes-Incze

Magda

Biró

2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO2 support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples.This etching technique opens up new possibilities in graphene patterning and modification. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…Specific crystallographic polymorphs of SiC powder are synthesised via a range of methods, often requiring long processing times or complex processing procedures. These include; mechanochemical processing and hot consolidation [1,2], chemical vapour deposition [3], carbothermic reduction [4,5], carbothermal reduction [6], aerosol assisted synthesis and DC thermal plasma synthesis [7]. Cubic SiC is attractive as it exhibits high thermal conductivity and refractoriness, low thermal expansion and outstanding abrasion/erosion resistance.…”

Section: Introductionmentioning

confidence: 99%