Synthesis of Al2O3-nanowhisker-based HKUST1 MOF composites

This paper presents preparation of boron‐doped Al2O3 thin films by atomic layer deposition (ALD) using phenylboronic acid (PBA) and trimethylaluminum (TMA) as precursors. Deposition temperatures of 160–300 °C are studied, giving a maximum growth per cycle (GPC) of 0.77 Å at 200 °C. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) are used to study the surface morphology and roughness of the films. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR‐FTIR), Time‐of‐flight elastic recoil detection analysis (ToF‐ERDA), and X‐ray photoelectron spectroscopy (XPS) are used to study the composition of the films. An annealing process is carried out at 450 °C for 1 h to investigate its effect on the elemental composition and electrical properties of the boron‐doped Al2O3 thin films. The boron‐doped Al2O3 70 nm thick film deposited at 200 °C has a boron content of 3.7 at.% with low leakage current density (10−9 to 10−6 A cm−2) when the film thickness is 70 nm. The dielectric constant of this boron doped Al2O3 film is 5.18.

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“…[ 46 ] The Al‐O bonds formed by the PBA‐TMA process show two strong peaks at 770 and 870 cm −1 . [ 47 ]…”

Section: Resultsmentioning

confidence: 99%

“…[46] The Al-O bonds formed by the PBA-TMA process show two strong peaks at 770 and 870 cm −1 . [47] XPS data were obtained by measuring a 70 nm film deposited with the PBA-TMA process at 200 °C (Figure 10). The Al 2p region had two peaks where Al 2 O 3 is at 74.1 eV and Al(OH) 3 at 74.5 eV.…”

Section: Film Compositionmentioning

confidence: 99%