Synthesis, characterization and decomposition studies of tris(N,N-dibenzyldithiocarbamato)indium(III): chemical spray deposition of polycrystalline CuInS2 on copper films

Group 13 metal carbochalcogenoato complexes: Synthesis, X‐ray structure analysis, and reactions

“…The Ga–S bonds [2.407(1)‐2.464(1) Å] are longer than the sum of their covalent bond radii (2.29 Å) [ 17 ] , but close to those of the tris(dithiocarbamato)‐[3a,3b,] and tris(xanthato)gallium complexes20, for example, Ga(SSCNEt 2 ) 3 (ave. 2.436 Å)[3a] and Ga(SSCOEt) 3 (ave. 2.435 Å). The In–S bond distances [2.5792(12)–2.6258(13) Å] are slightly longer than the sum of their covalent bond radii (2.54 Å),16,17 but close to those with S ‐donated bidentate ligands such as carbodithioates, [ 6,21,22 ] dithiocarbamates,3,22‐29 and xanthates,20,30,31 for example, In(SSCCH 2 Ph) 3 (ave. 2.603 Å),6 In(SSCNEt 2 ) 3 (ave. 2.597 Å)3a and In(SSCOEt) 3 (ave. 2.598 Å) . The dihedral angles between the benzene rings containing C10 and C18 and the carbodithioate planes in compound 10c were 49.11(8)° and 49.7(2)°, respectively, while that of C2 was 23.20(17)°.…”

Synthesis of two new group 13 benzoato–chloro complexes: A structural study of gallium and indium chelating carboxylates

“…The reaction most likely proceeds through an intermediate ethane-like formally Ga(II) complex, Ga 2 Cl 4 (γ-pic) 2 (3). An unsuccessful attempt to produce a gallium basic carboxylate (Ref.…”

“…32). This is typically not observed in the family of mer-InX 3 (Rpy) 3 (R = H, X = I, Br; R = Et; X = Cl; R = Me, X = I) complexes where the average In-N bond length is 2.31 Å (Refs. 38 to 41).…”

“…38 to 41). There is some asymmetry in merInCl 3 (py) 3 •py where there is a some lengthening of the In-N bond trans to a Cl (2.377(21) Å) versus 2.302(7) Å (for trans pyridines). The In-N bond lengths were similar for the two seven-coordinate compounds with terpyridine (2.292 (2) As noted above and compiled in Table 3 A final observation to make is that compounds 1 and 2 adopt a roughly pentagonal bipyramidal structure.…”

Preparation of CuInSe2 thin films through metal organic chemical vapor deposition method by using di-μ-methylselenobis(dimethylindium) and bis(ethylisobutyrylacetato) copper(II) precursors

“…The CIS thin films can be prepared by several methods such as multistage evaporation of elements or binary selenide sources by sputtering, selenization of sputtered metal films, molecular beam epitaxy, flash evaporation, spray pyrolysis, and electrochemical bath deposition [5][6][7][8][9][10][11][12]. These methods typically involve high temperature process, or there are some difficulties in controlling stoichiometry, film thickness, and grain size in the product, leading to various defects in the film and detrimental to device performance.…”