Synthesis and properties of antimonide nanowires

Borg, Bertil; Wernersson, Lars‐Erik

doi:10.1088/0957-4484/24/20/202001

Cited by 90 publications

(88 citation statements)

References 130 publications

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“…In the latter case, no field effect has been reported so far. Meanwhile, GaSb p-type nanowires are also the subject of intense research, much for the same reasons [9][10][11][12][13][14] .…”

Section: Introductionmentioning

confidence: 99%

Gate-tunable electronic transport in p -type GaSb quantum wells

et al. 2019

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We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak anti-localization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system. arXiv:1901.10891v2 [cond-mat.mes-hall]

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Section: Introductionmentioning

confidence: 99%

Gate-tunable electronic transport in p -type GaSb quantum wells

et al. 2019

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“…Due to the incongruent evaporation of III and V elements when InSb was heated [9], the V/III ratio cannot be directly and independently controlled. The V/III precursor ratio supply was unbalanced during the growth [12][13], which is bad to the growth of InSb nanowires by direct evaporation of InSb.…”

Section: Resultsmentioning

confidence: 99%

Gallium-assisted growth of InSb nanowire

2019

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Indium antimony (InSb) nanowires have been synthesized by chemical vapor deposition and we found that adding gallium as the other evaporation resource can increase the density of nanowires and no doping pollution. For the growth of InSb nanowire, Au film was annealed to form Au nanoparticles as catalysts and explain its catalytic principle. We thought that gallium which coated on the surface of Au nanoparticles assisted nucleation and growth of InSb nanowire in the early stage. The diameter of the InSb nanowires was 60–100nm and 1-5μm in length. The grown nanowires have good crystallinity. We found that the surface of InSb was oxidized, and the main oxide was indium oxide. We discovered the tip morphologies of nanowires are different and discussed the causes of this phenomenon in detail.

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“…In fact, some novel structures like zinc blend or wurtzite or zinc blend twinning superlattice have been investigated [ 82 , 154 – 156 ]. However, antimonide NWs with the ZB structure are dominating from the previous reports, and this keeps true even for ternary antimonide NWs with only a small Sb concentration [ 157 ]. Although Mandl et al [ 24 ] and Pozuelo et al [ 76 ] have reported WZ structure of antimonide NWs.…”

Section: Reviewmentioning

confidence: 90%

Indium Antimonide Nanowires: Synthesis and Properties

et al. 2016

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This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is vapor phase deposition of NWs by manifold techniques. In addition, author review various protocols and methodologies employed to generate NWs from diverse material systems via self-organized fabrication procedures comprising chemical vapor deposition, annealing in reactive atmosphere, evaporation of InSb, molecular/ chemical beam epitaxy, solution-based techniques, and top-down fabrication method. The benefits and ill effects of the gold and self-catalyzed materials for the growth of NWs are explained at length. Afterward, in the next part, four thermodynamic characteristics of NW growth criterion concerning the expansion of NWs, growth velocity, Gibbs–Thomson effect, and growth model were expounded and discussed concisely. Recent progress in device fabrications is explained in the third part, in which the electrical and optical properties of InSb NWs were reviewed by considering the effects of conductivity which are diameter dependent and the applications of NWs in the fabrications of field-effect transistors, quantum devices, thermoelectrics, and detectors.

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Synthesis and properties of antimonide nanowires

Cited by 90 publications

References 130 publications

Gate-tunable electronic transport in p -type GaSb quantum wells

Gate-tunable electronic transport in p -type GaSb quantum wells

Gallium-assisted growth of InSb nanowire

Indium Antimonide Nanowires: Synthesis and Properties

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