Gallium-assisted growth of InSb nanowire

Abstract

Indium antimony (InSb) nanowires have been synthesized by chemical vapor deposition and we found that adding gallium as the other evaporation resource can increase the density of nanowires and no doping pollution. For the growth of InSb nanowire, Au film was annealed to form Au nanoparticles as catalysts and explain its catalytic principle. We thought that gallium which coated on the surface of Au nanoparticles assisted nucleation and growth of InSb nanowire in the early stage. The diameter of the InSb nanowires was 60–100nm and 1-5μm in length. The grown nanowires have good crystallinity. We found that the surface of InSb was oxidized, and the main oxide was indium oxide. We discovered the tip morphologies of nanowires are different and discussed the causes of this phenomenon in detail.

Atomic Layer Deposition of Ni-Co-O Thin-Film Electrodes for Solid-State LIBs and the Influence of Chemical Composition on Overcapacity

“…On the cross-section view of the NCO-1/1 sample ( Figure 4 d bottom), nanowire crystals can be easily observed, reaching lengths up to 40 nm. Several mechanisms of the nanowire/whiskers growth are presented in the literature, describing the morphology of the sample NCO-1/1 [ 65 , 66 , 67 ], including the growth of metal-oxide whiskers [ 68 , 69 , 70 ]. During the formation of TMO nanowires, the importance of the chemical composition and growth conditions were noted [ 69 , 70 ].…”