Synthesis and Molecular Properties of Tricyclic Biselenophene-Based Derivatives with Nitrogen, Silicon, Germanium, Vinylidene, and Ethylene Bridges

Abstract

A new class of biselenophene-based materials including an sp(3)-silicon-bridged diselenosilole (DSS), an sp(3)-germanium-bridged diselenogermole (DSG), and an sp(3)-nitrogen-bridged diselenopyrrole (DSP) as well as an sp(2)-vinylidene-bridged dicyanodiselenofulvene (CDSF), a diacetylenediselenofulvene (ADSF), and a dioctylethylene-bridged benzodiselenophene (BDS) have been successfully synthesized and characterized. The bridging moieties play an important role in determining the optical and electrochemical properties. The six brominated derivatives are ready to construct various biselenophene-based conjugated materials with tunable properties for organic photovoltaics and field effect transistors.

An Easy Synthetic Approach to Construct Some Ebselen Analogues and Benzo[b]selenophene Derivatives: Their Antioxidant and Cytotoxic Assessment

“…On the other hand, selenophenes and their benzo‐annulated derivatives continue to attract attention of various research groups because of their growing importance in material engineering as stable organic semiconductors for high‐performance field‐effect transistors . Also, their potent biological activities and synthetic applications are well known .…”

Synthesis of (Benzofurano)(benzothieno)germole

“…Of those, dithienosilole and dithienogrmole (DTS and DTG in Scheme ) are of particular interest as building blocks of conjugated organic compounds and polymers that may be used as functional materials, such as organic transistor, solar cell, and photo‐ and electroluminescence materials . Recently, Si‐ and Ge‐bridged biindole, bi(benzothiophene), bipyridyls, and biselenophenes were also prepared and their properties and functionalities were explored.…”

Synthesis and electron-transport properties of N-trifluoromethylphenyl-phthalimides containing selenophene substituents

“…[33][34][35][36] Secondly, because selenophenes have good electron-donating properties, PI derivatives containing these moieties should possess donor-acceptor (D-A) type structures and display ICT properties. [37][38][39][40][41] Finally, crystals of the N-CF 3 phsubstituted PIs should have electron-withdrawing layered structures, which enhance the expression of n-type semiconductor characteristics needed for functioning FETs.…”