“…Unfortunately, a common observation during the development of PZT technology was that thin films, whether deposited by sputtering, CVD, PLD, or chemicalsolution deposition processes, did not have the same properties as their bulk counterparts. [3][4][5][6][7] These observations have since led to increased activity in the field in an attempt to elucidate the fundamental differences between bulk and thin film ferroelectric perovskites. Potential mechanisms for the observed differences in PZT materials include: thickness, grain size, interface, crystal orientation, and residual stress.…”