Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

Ong, R. J.; Berfield, Thomas A.; Sottos, Nancy R.; Payne, David A.

doi:10.1016/j.jeurceramsoc.2005.03.103

Cited by 32 publications

(16 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Measurements from SEM micrographs indicated a consistent grain density across each of the thicknesses, with an average grain diameter of ϳ110 nm based on a linear intercept method. 22 Results from standard dielectric tests performed 25,26 on each specimen using a Precision LCR meter ͑Hewlett-Packard 4824A͒ are also included in Table I. These values reflect the average of tests taken from a number of electrodes across the specimen.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Berfield

Ong

Payne

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

Piezoelectric properties of three sol-gel derived Pb͑Zr 0.53 Ti 0.47 ͒O 3 thin film specimens of different thicknesses integrated onto Pt/ Ti/ SiO 2 ʈ Si substrates are investigated to delineate the influence of residual stress on the strain-field response characteristics from other thickness related effects. Residual tensile stresses are determined from wafer curvature measurements for films ranging in thickness from 190 to 500 nm. Field-induced strains are measured interferometrically for each film under either a large ac driving voltage or a small ac ripple applied over a range of dc biases. Higher residual stresses decrease measured piezoelectric response, while thickness variations with no accompanying change in residual stress state produce little change in strain-field behavior. The diminished performance associated with high residual stresses is attributed to reductions in both linear and nonlinear contributions, including decreased polarization switching and domain motion.

show abstract

Section: Resultsmentioning

confidence: 99%

“…As the film thickness increased, the dielectric constant also increased, while the loss, tan ␦, remained nearly constant. 25 Field-induced displacements for the 350 nm sample driven at increasing ac fields are given in Fig. 3.…”

Section: Resultsmentioning

confidence: 99%

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Berfield

Ong

Payne

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…8) Ong et al reported that the tensile residual stress decreases the piezoelectric property. 9) Therefore, control of the residual stress in thin films is an important research field to obtain ferroelectric thin films with high electrical properties.…”

Section: Introductionmentioning

confidence: 99%

Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer

Ohno

Malič

Fukazawa

et al. 2009

J. Ceram. Soc. Japan

View full text Add to dashboard Cite

This paper specifically examines control of the residual stress in thin films by design of the stacking structure. For this study, we prepared highly a-, c-oriented PZT(30/70) (: PZT30) thin films using chemical solution deposition (CSD). A PZT30 thin film was deposited on LaNiO3 (LNO)/Pt/Ti/SiO2/Si and LNO/SiO2/Si with different LNO layer thickness to control the thermal stress. An LNO layer was also prepared using CSD on a Pt/Ti/SiO2/Si substrate and SiO2/Si substrate. The residual stresses in the PZT30 thin films were estimated using Raman analysis. Furthermore, the dielectric property of samples was measured using an impedance analyzer. Effects of the residual stress on the dielectric behavior were demonstrated through experimentation.

show abstract

“…Different technologies have been reported to deposit thin PZT films: MOCVD, sol-gel, laser-ablation, sputtering [29][30][31]58]. Among these mentioned methods and the numerous different methods, the sol-gel processing technique is the most widely used due to its low densification temperature, the ease at which the film can be applied without costly physical deposition equipment and the capability to fabricate both thin and thick films [59].…”

Section: Nanocrystalline-powders-enhanced (Ncpe-) Pztmentioning

confidence: 99%

Piezoelectric Pressure Sensor Based on Enhanced Thin-Film PZT Diaphragm Containing Nanocrystalline Powders

Mohammadi¹,

Mohammadi²,

Barghi³

2013

Piezoelectric Materials and Devices - Practice and Applications

View full text Add to dashboard Cite

Sol–gel derived Pb(Zr,Ti)O3 thin films: Residual stress and electrical properties

Cited by 32 publications

References 22 publications

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Residual stress effects on piezoelectric response of sol-gel derived lead zirconate titanate thin films

Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer

Piezoelectric Pressure Sensor Based on Enhanced Thin-Film PZT Diaphragm Containing Nanocrystalline Powders

Contact Info

Product

Resources

About