2019
DOI: 10.1007/s10854-019-01431-9
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Synthesis and characterization of the ultra-thin SnS flakes and the micron-thick SnS crystals by chemical vapor deposition

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Cited by 9 publications
(8 citation statements)
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“…In addition, most of the SnS or SnS 2 devices reported were fabricated using exfoliated flakes. ,, The practical application of this fabrication method is challenging, although it can reveal the potentials and properties of the materials. To address this limitation, chemical vapor deposition (CVD) was used for the synthesis of SnS and SnS 2 layers. Although large-area synthesis is possible using this method, the layer thickness control, which is related to the performance of the 2D layered semiconductor, cannot be easily achieved. , Therefore, there is a need for a large-area thin-film growth method that can control the thickness, such as atomic layer deposition (ALD). In previous studies, it has been reported that the piezoelectricity can be enhanced by forming 2D heterojunctions, such as WSe 2 /MoS 2 and In 2 Se 3 /MoS 2 . , Thus ALD provides a facile way to form a 2D heterostructure compared with other methods such as the exfoliated flake transfer method and CVD, allowing the exploration of similar effects in SnS 2 - or SnS-based heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, most of the SnS or SnS 2 devices reported were fabricated using exfoliated flakes. ,, The practical application of this fabrication method is challenging, although it can reveal the potentials and properties of the materials. To address this limitation, chemical vapor deposition (CVD) was used for the synthesis of SnS and SnS 2 layers. Although large-area synthesis is possible using this method, the layer thickness control, which is related to the performance of the 2D layered semiconductor, cannot be easily achieved. , Therefore, there is a need for a large-area thin-film growth method that can control the thickness, such as atomic layer deposition (ALD). In previous studies, it has been reported that the piezoelectricity can be enhanced by forming 2D heterojunctions, such as WSe 2 /MoS 2 and In 2 Se 3 /MoS 2 . , Thus ALD provides a facile way to form a 2D heterostructure compared with other methods such as the exfoliated flake transfer method and CVD, allowing the exploration of similar effects in SnS 2 - or SnS-based heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…The peaks at 90.36 and 221.5 cm −1 correspond to the vibrational modes of A g , while the peak at 163.65 cm −1 corresponds to the B 3g vibrational mode. 42 Moreover, the signal peak at 306.35 cm −1 corresponds to the characteristic peak of Sn 2 S 3 . 43 The typical peak corresponding to SnS can also be seen in the low-frequency region of the SDC, indicating that SnS was successfully synthesized in the SDC.…”
Section: Resultsmentioning
confidence: 95%
“…Most reports apply chemical vapor transport reactions in an experiential way to achieve their materials of interest in pure single crystal. the ZnO, InGaAs, SnS and MoS2 nanostructures are assisted selection offers a proper transport operator for specific materials of various substances classes [23][24][25][26] . Yet, the control amplitudes is still a challenge and it need more reconnaissance for producing inorganic nanostructures with high efficiency.…”
Section: Chemical Vapor Deposition (Cvd)mentioning
confidence: 99%