Recently, the inherent piezoelectric properties of the 2D transition-metal dichalcogenides (TMDs) tin monosulfide (SnS) and tin disulfide (SnS2) have attracted much attention. Thus the piezoelectricity of these materials has been theoretically and experimentally investigated for energy-harvesting devices. However, the piezoelectric output performance of the SnS2- or SnS-based 2D thin film piezoelectric nanogenerator (PENG) is still relatively low, and the fabrication process is not suitable for practical applications. Here we report the formation of the SnS2/SnS heterostructure thin film for the enhanced output performance of a PENG using atomic layer deposition (ALD). The piezoelectric response of the heterostructure thin film was increased by ∼40% compared with that of the SnS2 thin film, attributed to large band offset induced by the heterojunction formation. Consequently, the output voltage and current density of the heterostructure PENG were 60 mV and 11.4 nA/cm2 at 0.6% tensile strain, respectively. In addition, thickness-controllable large-area uniform thin-film deposition via ALD ensures that the reproducible output performance is achieved and that the output density can be lithographically adjusted depending on the applications. Therefore, the SnS2/SnS heterostructure PENG fabricated in this work can be employed to develop a flexible energy-harvesting device or an attachable self-powered sensor for monitoring pulse and human body movement.

Two-dimensional (2D) nanomaterials have distinct optical and electrical properties owing to their unique structures. In this study, smooth 2D amorphous tin disulfide (SnS2) films were fabricated by atomic layer deposition (ALD), and applied for the first time to photoelectrochemical water splitting. The optimal stable photocurrent density of the 50-nm-thick amorphous SnS2 film fabricated at 140 °C was 51.5 µA/cm2 at an oxygen evolution reaction (0.8 V vs. saturated calomel electrode (SCE)). This value is better than those of most polycrystalline SnS2 films reported in recent years. These results are attributed mainly to adjustable optical band gap in the range of 2.80 to 2.52 eV, precise control of the film thickness at the nanoscale, and the close contact between the prepared SnS2 film and substrate. Subsequently, the photoelectron separation mechanisms of the amorphous, monocrystalline, and polycrystalline SnS2 films are discussed. Considering above advantages, the ALD amorphous SnS2 film can be designed and fabricated according to the application requirements.

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Charge transporting materials (CTMs) in perovskite solar cells (PSCs) have played an important role in improving the stability by replacing the liquid electrolyte with solid state electron or hole conductors and enhancing the photovoltaic efficiency by the efficient electron collection. Many organic and inorganic materials for charge transporting in PSCs have been studied and applied to increase the charge extraction, transport and collection, such as Spiro-OMeTAD for hole transporting material (HTM), TiO2 for electron transporting material (ETM) and MoOX for HTM etc. However, recently inorganic CTMs are used to replace the disadvantages of organic materials in PSCs such as, the long-term operational instability, low charge mobility. Especially, atomic layer deposition (ALD) has many advantages in obtaining the conformal, dense and virtually pinhole-free layers. Here, we review ALD inorganic CTMs and their function in PSCs in view of the stability and contribution to enhancing the efficiency of photovoltaics.