Synthesis and Characterization of Several α‐Silicon Nitride Nanostructures

Abstract

Silicon nitride (Si 3 N 4 ) nanowires and nanobelts have been successfully prepared via direct crystallization of amorphous Si 3 N 4 nanoparticles under high temperature in a N 2 flow. The products were characterized by X-ray powder diffraction, scanning electron microscopy, transmission electron microscopy, high-resolution electron microscopy, and electron diffraction. They are pure a-phase hexagonal single-crystal structures. The nanowires are long and smooth; nanobelts are long and twisted. In our samples, there exist some special nanostructures, such as wire-inserted hexagonal nanosheet and hollow-chain-shaped structure. The different growth modes were understood upon the observations and characterization of those microstructures. The solid-liquid-solid growth mechanism is also discussed.J ournal

Comparison of Silicon Nitride Nanofibers Synthesized Using Silica Nanopowders and Silica Gel

“…Alpha silicon nitride nanowires formed with a fairly high purity. Another route to successful synthesis was outlined by Zhang et al [20]. They used the direct crystallization of amorphous silicon nitride nanopowders under high temperature in a flowing nitrogen atmosphere.…”

Fabrication of Si3N4Nanocrystals and Nanowires Using PECVD

“…Moreover, nanoscaled Si 3 N 4 materials, quantum dots [4][5][6], nanotubes [7], nanowires [8,9], and thin nanofilms [10] have superior photoelectric [11] and mechanical properties [12,13] for the quantum confinement effects, and therefore, the improvement in device and nanocomposite performance can be predicted [14]. Various techniques, such as catalyst-assistant synthesis of a polysilazane [15], direct nitridation process [16], amorphous silicon nitride nanopowder nitridation [17], si-containing compounds carbothermal reductionnitridation [18], chemical vapor deposition (CVD) [19], and plasma assisted chemical vapor deposition (PECVD) are used to prepare Si 3 N 4 nanomaterials. Among these available techniques, PECVD has many advantages over others.…”

Synthesis and Photoluminescence of Eu2+‐Doped α‐Silicon Nitride Nanowires Coated with Thin BN Film

“…Silicon nitride nanowires have received widespread interests since they possess special properties that may be useful in the electronics field at high temperature, high power, and high frequency, and in harsh environments 4–10 . Recently, much attention has been focused on the optical properties 6–10 .…”

“…3 Silicon nitride nanowires have received widespread interests since they possess special properties that may be useful in the electronics field at high temperature, high power, and high frequency, and in harsh environments. [4][5][6][7][8][9][10] Recently, much attention has been focused on the optical properties. [6][7][8][9][10] Most of the revealed photoluminescence properties originated from surface defects; the emission is weak and hard to be controlled.…”