Fabrication of Si₃N₄Nanocrystals and Nanowires Using PECVD

Abstract

Si3N4nanowires and nanocrystals were prepared on Si substrates with or without Fe catalyst using silane (SiH4) and nitrogen (N2) as reactive gases through plasma-enhanced chemical vapor deposition (PECVD) technology. With Fe catalyst,Si3N4nanowires were developed, indicating that Fe catalyst played a role forSi3N4molecules directionally depositing into strings. The density of the nanowires is closely related to the density of Fe catalyst. When the density of Fe ions on the substrate was decreased remarkably, a smooth superlongSi3N4nanowire with 12 μm in length was fabricated. Having analyzed the growth mechanism, a growth model forSi3N4nanowires was developed. The growth ofSi3N4nanocrystallines was attributed to be a vapor-solid (V-S) deposition process.

Effects of newly synthesized nanocomposites containing multifunctionalized silicon nitride nanoparticles: A study on structural, thermal, electrochemical, mechanical, morphological, water repellent properties for aerospace components

“…Figure 4 illustrates the XRD patterns of pure Si 3 N 4 and BAPOD modified Si 3 N 4 samples. The peaks obtained at (2 θ ) 19.7°, 22.0°, 26.8°, 32.9°, 33.8°, and 46.9° are related to (101), (110), (200), (102), (201), and (301) crystal faces 33 . However, BAPOD/Si 3 N 4 nanoparticles display the same peaks as that of the Si 3 N 4 nanoparticles but with reduced intensities in their peaks.…”

“…The peaks obtained at (2θ) 19.7 , 22.0 , 26.8 , 32.9 , 33.8 , and 46.9 are related to (101), ( 110), ( 200), ( 102), (201), and (301) crystal faces. 33 However, BAPOD/Si 3 N 4 nanoparticles display the same peaks as that of the Si 3 N 4 nanoparticles but with reduced intensities in their peaks. Therefore, it is concluded from the investigation that the Si 3 N 4 nanoparticles are continued to maintain its crystalline structure, even after its surface modification by BAPOD with enriched cross-linked structures.…”

Controlled Synthesis of Horizontal Silicon Nanowires for Biosensor Application

“…13 The catalyst-assisted nanowire growth through the vapor-liquid-solid (VLS) process is a widely used method in PECVD. 14 However, most of the nanowire growth in PECVD also has a vertical direction, which causes problems in assembling them between gap electrodes for sensing applications. Hence, to avoid this process, surface (horizontal) growth on a wafer with gap electrodes is required.…”

Surface Growth of Tree-like Si Nanowire Structures on Micro-gap Electrodes and Their Application in Bio-sensing Applications

“…Also, in PECVD low temperature growth of Si nanowires is possible due to 363 ℃ of Au/Si eutectic point, which can decompose SiH 4 easily 2 . Normally, catalyst assisted nanowire growth through the Vapor-Liquid-Solid (VLS) process is widely used method in PECVD 3 . Most of nanowire growth has vertical direction which causes the problem for assembling them in to gap electrodes for sensing applications.…”