Synthesis and characterization of porous silicon gas sensors

abbas, Roaa A; Alwan, Alwan M.; Abdulhamied, Zainab T

doi:10.1088/1742-6596/1003/1/012087

Cited by 5 publications

(6 citation statements)

References 21 publications

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“…The amount of porosity of the samples prepared in this way depends on several parameters, the most important of which are the concentration of the solution, the current density, the etching time, and the intensity of the laser beam applied to the sample [11][12][13]. The influence of laser beam intensity on the amount of porosity and pore diameter of the sample prepared from n-type silicon has been studied in this work, as has the latter's effect on the amount of sensitivity, which has been discussed with the usage of methanol gas [14,15]. When used as a sensor for environmental pollution with toxic gases, the PSi was prepared and studied to determine the effect of the preparation conditions on its properties [16,17].…”

Section: Theoretical Partmentioning

confidence: 99%

Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology

Abdullah¹,

Haider²,

Jabbaar³

2022

JASN

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Manufacture of an environmental polluting gas sensor with improved properties by controlling the preparation conditions of the photoelectrochemical etching technique (PECE). The amount of porosity, the diameter of the pores, and the thickness of the prepared layer of porous silicon (Psi) can be controlled by changing one or all of these conditions. In this paper, n-type Si with a crystalline orientation (100) was used, whereby PSi was prepared with the use of a red diode laser with a wavelength of 650 nm, using different radiation intensity, and with the constancy of etching time and current density. Through the results obtained, it was noted that: the porosity increases significantly up to 75% as well as the thickness of the PSi layer up to 1.45 µm with the increase in the intensity of the laser beam. Also, examining the morphology of the surface samples by field emission scanning electron microscope (FE-SEM) besides, the average pore diameters of the prepared samples were calculated. It is clear that the intensity of the laser beam used in the irradiation process is one of the important factors in determining the properties of the prepared PSi. PSi samples have been tested by FTIR to investigate chemical bonds on surfaces such as, (Si-Si, Si-H, Si-H2, Si-O-Si, Si-O-Si, Si-H, Si-O-Si). Samples tested as gas sensors and noticed that an increase in the sensing current to 5.3 µA has appeared with the increase of porosity value where methanol gas is used as background.

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Section: Theoretical Partmentioning

confidence: 99%

Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology

Abdullah¹,

Haider²,

Jabbaar³

2022

JASN

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“…These properties of (PSi), such as pore form, pore width, and the wall thickness between adjacent pores, have been examined using a scanning electron microscope to create a clear picture of the structure (SEM) [10]. The SEM images of the PS layers cantered on the c-Si n-type (100) wafer with etching time at 30, 60, and 90 min respectively, and current density (20mA/cm 2 ) at magnification 50.0kx.…”

Section: Morphological Propertiesmentioning

confidence: 99%

“…The results showed more pores found with larger sizes and a decrease in the thickness of the walls between the pores with an increase in the etching time. The increase in the etching time improves the degradation process of silicon crystals, which causes the generation of more electron-hole pairs [10]. The luminous region indicates the structure of the silicon, and the darker region indicates the porous silicon formed.…”

Section: Morphological Propertiesmentioning

confidence: 99%

“…Because of the improvement in Responsiveness, porous silicon can be used instead of silicone in gas sensor applications. The easy to manufacture and etching process cheapness made it the perfect material for a sensor, which has been producing using various shapes [9,10]. In recent years, the operation of many chemical sensors using PSi has been detected due to the porosity within it, and it is one of the significant properties, which can be defined as the portion of void within the PSi layer [11] and a factor that describes the top graph of the PSi layer's surface, which is affected by the etching conditions [12].…”

Section: Introductionmentioning

confidence: 99%

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Study of the Vacuum Pressure Sensing from the Electrical Resistance Response of Porous Silicon Fabricated via Photo-Electrochemical Technique

Dawood¹,

Zayer²,

Jawad³

2022

JASN

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The manufacturing of vacuum sensors is critical to several vacuumbased applications. Porous silicon (PSi) was chosen as the vacuum sensor due to the possibility of moving air particles settled inside the pores while being put in the vacuum. The characteristics of porous silicon sensing to the evacuation of gases during vacuum was inferred by changing in the electrical resistivity. This work depends on the change in the electrical resistance of the PSi layers that was prepared via photo-electrochemical technique on the n-type (100) oriented silicon wafer. The surface topography of porous silicon is necessary to understand the morphological properties. Therefore, structural and morphological characterization of PSi samples were studied and analyzed using the scanning electron microscope (SEM) and X-Ray Diffraction (XRD) pattern. The etching process was carried out with various etching times, hydrofluoric acid (HF) concentration, and constant current density. The results showed that the pore size is increased as the etching time increased. The etching time produced pores of different sizes. The electrical resistance values were calculated after placing the sample in the vacuum system, starting from atmospheric pressure down to 10 −5 torr. The electrical properties of PSi indicate that electrical resistance gradually decreases with increasing vacuum pressure.

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“…In parallel with the above-mentioned optical transducers, nano-Si is widely used for (bio)sensor application based on electrical and electrochemical responses [77]. For instance, I(J)-V measurements were carried out for the detection of biomolecules [79,105], gases [21,49,106,107,108], light [109,110,111], and pH [112,113,114]. Shashaani et al reported about Mebendazole (MBZ) drug activity on breast cancer cells (MCF-7) adhered over a SiNW chip [105].…”

Section: (Bio)sensors Based On Psi Sinws Sinps and Their Composimentioning

confidence: 99%

Nanosilicon-Based Composites for (Bio)sensing Applications: Current Status, Advantages, and Perspectives

Myndrul

Iatsunskyi

2019

Materials

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This review highlights the application of different types of nanosilicon (nano-Si) materials and nano-Si-based composites for (bio)sensing applications. Different detection approaches and (bio)functionalization protocols were found for certain types of transducers suitable for the detection of biological compounds and gas molecules. The importance of the immobilization process that is responsible for biosensor performance (biomolecule adsorption, surface properties, surface functionalization, etc.) along with the interaction mechanism between biomolecules and nano-Si are disclosed. Current trends in the fabrication of nano-Si-based composites, basic gas detection mechanisms, and the advantages of nano-Si/metal nanoparticles for surface enhanced Raman spectroscopy (SERS)-based detection are proposed.

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Synthesis and characterization of porous silicon gas sensors

Cited by 5 publications

References 21 publications

Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology

Fabrication of Porous Silicon as a Gas Sensor: The Role of Porous Silicon Surface Morphology

Study of the Vacuum Pressure Sensing from the Electrical Resistance Response of Porous Silicon Fabricated via Photo-Electrochemical Technique

Nanosilicon-Based Composites for (Bio)sensing Applications: Current Status, Advantages, and Perspectives

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