Synthesis and characterization of new quaternary MoBiInSe5 mixed metal chalcogenide thin films

Mane, Rahul M.; Mane, S.R.; Kharade, Rohini R.; Bhosale, Popatrao N.

doi:10.1016/j.jallcom.2009.10.159

Cited by 22 publications

(14 citation statements)

References 19 publications

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“…It is clear that, the electrical conductivity of all samples under investigation increases exponentially over the whole temperature range indicating normal semiconductor behavior of the MoBi 2 (Se 1Àx Te x ) 5 thin films. The linear variation of log(s) with 1000/T indicated that the conduction in these samples is through thermally activated process, which agrees well with the results of other workers for chalcogenide material [23,24]. Activation energy of deposited films was calculated by Eq.…”

Section: Electrical Conductivitysupporting

confidence: 89%

Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

Salunkhe

Kharade

et al. 2012

Materials Research Bulletin

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Section: Electrical Conductivitysupporting

confidence: 89%

Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

Salunkhe

Kharade

et al. 2012

Materials Research Bulletin

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“…24 Generally, a slow reaction rate results in the formation of good-quality and adherent thin films. 21 Hence, our developed arrested precipitation technique is effective compared with routine chemical bath processes. The comprehensive growth mechanism for the formation of the CSSe thin films is depicted in Scheme 1.…”

Section: Growth and Reaction Mechanisms Of The Thin Film Formationmentioning

confidence: 99%

“…Most complexing agents used are flammable, carcinogenic and toxic by nature. 29,30 We have selected triethanolamine (TEA) as a stable complexing agent. The intention of this report is to optimise the growth pathway and engineer the surface morphology of CSSe thin films using TEA as the complexing agent.…”

Section: Introductionmentioning

confidence: 99%

Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application

et al. 2014

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Nanocrystalline cadmium sulfoselenide thin films have been synthesized using a self-organized arrested precipitation technique with different deposition times using triethanolamine as a complexing agent. Optical, structural, morphological and photoelectrochemical solar cell properties were investigated as a function of deposition time. A UV-Vis-NIR absorption study suggested a direct allowed transition type and the band gap energy decreased from 2.01 to 1.86 eV with the increase in deposition time. X-ray diffraction studies revealed that the thin films are nanocrystalline by nature with a pure hexagonal crystal structure and a calculated crystallite size of 51-68 nm. Field emission scanning electron microscopy demonstrated that the surface morphology was altered from nanoflakes to assorted nanoflakes-nanospheres and finally to a nanocoral-like morphology. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy showed that the composition of the Cd(SSe) thin films was of good stoichiometry. Electrical conductivity and thermoelectric power measurements confirmed that the deposited films were n-type semiconductors. From J-V measurements, a highest photo-conversion efficiency of 0.57% was achieved.The significant boost in the PEC performance might be due to the improved crystallinity along with lower values of the grain boundary resistance, dislocation density and the microstrain of the Cd(SSe) thin films.

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“…Different materials are used as window layer including CdS [5,6], Cd(SSe) [7], and ZnS [8]. Researchers have suggested some more materials for solar cell application, such as MoBiInSe 5 [9], SnSb2S4 [10], and SnS [11]. Tin sulfide (SnS) and bismuth sulfide (Bi 2 S 3 ) are candidate materials for sustainable photovoltaic applications with band gaps of *1.3 and *1.7 eV, respectively, that bracket the ideal value of 1.5 eV.…”

Section: Introductionmentioning

confidence: 99%

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Synthesis and characterization of new quaternary MoBiInSe5 mixed metal chalcogenide thin films

Cited by 22 publications

References 19 publications

Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

Synthesis of fibrous reticulate nanocrystalline n-type MoBi2(Se1−xTex)5 thin films: Thermocooling applications

Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application

Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

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