Development of nanocoral-like Cd(SSe) thin films using an arrested precipitation technique and their application

Abstract

Nanocrystalline cadmium sulfoselenide thin films have been synthesized using a self-organized arrested precipitation technique with different deposition times using triethanolamine as a complexing agent. Optical, structural, morphological and photoelectrochemical solar cell properties were investigated as a function of deposition time. A UV-Vis-NIR absorption study suggested a direct allowed transition type and the band gap energy decreased from 2.01 to 1.86 eV with the increase in deposition time. X-ray diffraction studies revealed that the thin films are nanocrystalline by nature with a pure hexagonal crystal structure and a calculated crystallite size of 51-68 nm. Field emission scanning electron microscopy demonstrated that the surface morphology was altered from nanoflakes to assorted nanoflakes-nanospheres and finally to a nanocoral-like morphology. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy showed that the composition of the Cd(SSe) thin films was of good stoichiometry. Electrical conductivity and thermoelectric power measurements confirmed that the deposited films were n-type semiconductors. From J-V measurements, a highest photo-conversion efficiency of 0.57% was achieved.The significant boost in the PEC performance might be due to the improved crystallinity along with lower values of the grain boundary resistance, dislocation density and the microstrain of the Cd(SSe) thin films.

Chemosynthesis, characterization and PEC performance of CdZn(SSe)2 thin films by arrested precipitation technique (APT)

“…The linear nature of the optical absorption plot confirms the direct allowed transition and is obtained by using formula given in [9]. .…”

“…A variety of techniques presently used for the synthesis of cadmium and zinc chalcogenide semiconductor thin films [3][4][5][6][7][8]. In all these methods, APT is self organized, cost effective, suitable for large area deposition [9] and is presently usedby us to prepare CdZn(SSe) 2 thin films. In the present investigation, we propose the synthesis, growth mechanism, optostructural, morphological, compositional and photoelectrical properties of quaternary CdZn(SSe) 2 thin films by arrested precipitation technique (APT).…”

Structural, morphological, optical and electrical properties of Cu0.87Se thin films coated by electron beam evaporation method

“…The crystallite size (D) for the synthesized copper selenide source material and the deposited films was calculated using Scherrer's relation D = Kk/(b cos h) [32], where K is the shape factor (0.9), h is the Bragg's angle, k (1.5406 Å ) is the wavelength of X-ray used, and b is the full width at half maximum of the respective XRD peak (in radian). The dislocation density (d) was determined using the relation d = n/D 2 [33], where n is a factor, which equals unity giving minimum dislocation density, and the microstrain (e) was evaluated from e = (b cos h)/4 [34]. The calculated crystallite size, dislocation density and microstrain results are presented in Table 1.…”

Novel Approach for Invention of Nubbly‐Like Cd(SSe) Thin Film: Photoelectrochemical Application

“…Such morphology is beneficial for the improvement in conversion efficiency due to large surface for effectual light absorption. [3,8,9] EDS analysis is carried out to determine actual atomic percentage of respective elements in deposited thin film. From EDS pattern, it confirms that presence of Cd, S and Se element in deposited thin film (Figure 4).…”